PU1BMH PU1DMH Taiwan Semiconductor 1A, 100-200V Ultrafast Surface Mount Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified PARAMETER VALUE UNIT Planar technology I 1 A F Ideal for automated placement V 100-200 V RRM Low reverse leakage Moisture sensitivity level: level 1, per J-STD-020 I 28 A FSM RoHS Compliant T 175 C J MAX Halogen-free according to IEC 61249-2-21 Package Micro SMA APPLICATIONS High frequency switching DC/DC converter Snubber MECHANICAL DATA Case: Micro SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Micro SMA Weight: 0.006g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL PU1BMH PU1DMH UNIT Marking code on the device P1 P2 Repetitive peak reverse voltage V 100 200 V RRM Reverse voltage, total rms value V 70 140 V R(RMS) DC blocking voltage V 100 200 V DC Forward current I 1 A F Surge peak forward current single 8.3ms at T = 25C 28 A A half sine-wave superimposed on I FSM 1.0ms at T = 25C 52 A rated load per diode A Junction temperature T -55 to +175 C J Storage temperature T -55 to +175 C STG 1 Version: B2005 PU1BMH PU1DMH Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance R 28 C/W JL Junction-to-ambient thermal resistance R 60 C/W JA Junction-to-case thermal resistance R 34 C/W JC Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 0.5A, T = 25C 0.84 - V F J I = 1.0A, T = 25C 0.90 1.05 V F J (1) Forward voltage V F I = 0.5A, T = 125C 0.70 - V F J I = 1.0A, T = 125C 0.76 0.90 V F J T = 25C A - 1 J (2) Reverse current rated V I R R T = 125C A - 15 J I = 0.5A, I = 1.0A, Irr = 0.25A - 25 F R Reverse recovery time t ns rr I = 1.0A, di/dt = 50A/s, V = 30V 36 - F R Reverse recovery current I 3.4 - A RM Reverse recovery charge I = 1.0A, di/dt = 200A/s, V = 100V Q 40 - nC F R rr Reverse recovery time t 24 - ns rr Junction capacitance 1MHz, V = 4.0V C 18 - pF R J Notes: (1) Pulse test with PW = 0.3ms (2) Pulse test with PW = 30ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING PU1xMH M3G Micro SMA 3000 / 7 reel Notes: (1) x defines voltage from 100V(PU1BMH) to 200V(PU1DMH) 2 Version: B2005