RS1DFS - RS1MFS Taiwan Semiconductor 1A, 200V - 1000V Surface Mount Fast Recovery Rectifier FEATURES KEY PARAMETERS Glass passivated junction chip PARAMETER VALUE UNIT Ideal for automated placement I 1 A F(AV) Low profile package V 200 - 1000 V RRM Compliant to RoHS Directive 2011/65/EU and I 30 A in accordance to WEEE 2002/96/EC FSM Halogen-free according to IEC 61249-2-21 T 150 C J MAX Package SOD-128 APPLICATIONS Configuration Single die High frequency rectification Freewheeling application Switching mode converters and inverters in computer,automotive and telecommunication MECHANICAL DATA Case: SOD-128 Molding compound meets UL 94V-0 flammability rating Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) SOD-128 Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.027 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL RS1DFS RS1GFS RS1JFS RS1KFS RS1MFS UNIT Marking code on the device RS1DFS RS1GFS RS1JFS RS1KFS RS1MFS Repetitive peak reverse voltage V 200 400 600 800 1000 V RRM Reverse voltage, total rms value V 140 280 420 560 700 V R(RMS) Forward current I 1 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave superimposed I 30 A FSM on rated load per diode Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:B1907 RS1DFS - RS1MFS Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode R 29 C/W JL Junction-to-ambient thermal resistance per diode R 84 C/W JA Junction-to-case thermal resistance per diode R 30 C/W JC Thermal Performance Note: Units mounted on recommended PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT I = 0.5A, T = 25C 0.94 1.10 F J I = 1.0A, T = 25C 1.01 1.30 F J (1) Forward voltage per diode V V F I = 0.5A, T = 125C 0.79 1.00 F J I = 1.0A, T = 125C 0.88 1.20 F J - 5 T = 25C A J (2) Reverse current rated V per diode I R R - 50 T = 125C A J 7 - pF Junction capacitance 1 MHz, V =4.0V C R J RS1DFS ns - 150 RS1GFS I =0.5A ,I =1.0A F R ns Reverse recovery time RS1JFS t - 250 rr I =0.25A RR RS1KFS ns - 500 RS1MFS Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION PART NO. PACKING PACKING CODE PART NO. PACKAGE PACKING SUFFIX(*) CODE SUFFIX MW SOD-128 3,500 / 7 Plastic reel RS1xFS H G (Note 1, 2) MX SOD-128 14,000 / 13 Plastic reel Notes: 1.x defines voltage from 200V (RS1DFS) to 1000V (RS1MFS) 2. Whole series with green compound (halogen-free) *: Optional available EXAMPLE P/N PART NO. PACKING PACKING CODE EXAMPLE P/N PART NO. DESCRIPTION SUFFIX CODE SUFFIX AEC-Q101 qualified RS1DFSHMWG RS1DFS H MW G Green compound 2 Version:B1907