RS3B R6 Taiwan Semiconductor

RS3A - RS3M Taiwan Semiconductor 3A, 50V - 1000V Surface Mount Fast Recovery Rectifier FEATURES KEY PARAMETERS Glass passivated chip junction PARAMETER VALUE UNIT Ideal for automated placement I 3 A F(AV) Fast switching for high efficiency V 50 - 1000 V RRM High surge current capability Compliant to RoHS Directive 2011/65/EU and I 100 A FSM in accordance to WEEE 2002/96/EC T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AB (SMC) Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 DO-214AB (SMC) Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL RS3A RS3B RS3D RS3G RS3J RS3K RS3M UNIT Marking code on the device RS3A RS3B RS3D RS3G RS3J RS3K RS3M Repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Reverse voltage, total rms value V 35 70 140 280 420 560 700 V R(RMS) Maximum DC blocking voltage V 50 100 200 400 600 800 1000 V DC Forward current I 3 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave superimposed I 100 A FSM on rated load per diode Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:K1903 RS3A - RS3M Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode R 15 C/W JL Junction-to-ambient thermal resistance per diode R 50 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT (1) Forward voltage per diode I = 3A, T = 25C V - 1.3 V F J F T = 25C - 10 A J (2) Reverse current rated V per diode I R R T = 125C - 250 A J RS3A RS3B - 150 ns RS3D I =0.5A , I =1.0A F R RS3G Reverse recovery time t rr I =0.25A RR RS3J - 250 ns RS3K - 500 ns RS3M Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:K1903