CMF04 TOSHIBA Fast Recovery Diode Silicon Diffused Type CMF04 Radio-Frequency Rectification in Switching Regulators Unit: mm DC-DC Converters Repetitive peak reverse voltage : V = 800 V RRM Average forward current : I = 0.5 A F (AV) Peak forward voltage : V = 2.5 V (max) FM Very fast reverse-recovery time : t = 100 ns (max) rr Suitable for high-density board assembly due to the use of a small TM Toshiba Nickname: M FLAT Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating Unit Repetitive peak reverse voltage V 800 V RRM Average forward current I 0.5 (Note 1) A F (AV) Non-repetitive peak forward surge current I 10 (50 Hz) A FSM Junction temperature T 40 to 150 C j Storage temperature range T 40 to 150 C stg JEDEC Note 1: T = 127C JEITA Rectangular waveform ( = 180) TOSHIBA 3-4E1S Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.023 g (typ.) temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Peak forward voltage V I = 0.5 A (pulse test) 2.5 V FM FM Repetitive peak reverse current I V = 800 V (pulse test) 50 A RRM RRM Reverse recovery time t I = 1 A, di/dt = -30 A/s 100 ns rr F Forward recovery time t I = 1 A 550 ns fr F Device mounted on a ceramic board board size 50 mm 50 mm 60 soldering land size 2 mm 2 mm board thickness 0.64 mm Thermal resistance Device mounted on a glass-epoxy board board size 50 mm 50 mm (junction to ambient) R 135 C/W th (j-a) soldering land size 6 mm 6 mm board thickness 1.6 mm Device mounted on a glass-epoxy board board size 50 mm 50 mm 210 soldering land size 2.1 mm 1.4 mm board thickness 1.6 mm Thermal resistance (junction to lead) R 16 C/W th (j-) Start of commercial production 2007-04 1 2018-06-15 CMF04 Marking Abbreviation Code Part No. F4 CMF04 Land pattern dimensions for reference only Unit: mm 1.4 3.0 1.4 Handling Precaution 1) The absolute maximum ratings denote the absolute maximum ratings, which are rated values that must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend for when designing a circuit incorporating this device. V : We recommend that the worst case voltage, incngludi surge voltage, be no greater than 80% of the RRM absolute maximum rating of V for a DC circuit and no greater than 50% of that of V for an AC RRM RRM circuit. V has a temperature coefficient of 0.1%/. Take this temperature account coefficient into when RRM designing a device for operation at low temperatures. I : We recommend that the wors-ctase current be no greater than 80% of the absolute maximum rating of F(AV) I and that the worst-case junction temperature, T, be kept below 120. When using this device, allow F(AV) j margins, referring to the T - I curve. a(max) F(AV) I : This rating specifies peak non-repetitive forward surge current. This only applies to an abnormal operation, FSM which seldom occurs during the lifespan of a device. T : Derate device parameters in proportion to this rating in order to ensure high reliability. j We recommend that the junction temperature (T ) of a device be kept below 120 . j 2) Thermal resistance (junction-to-ambient) varies with the mounting conditions of a device on a circuit board. An appropriate thermal resistance value should be used, considering the circuit board design and soldering land size. 3) For other design considerations, see the Toshiba website. 2 2018-06-15 2.1