CMF05(TE12L,Q,M) Toshiba

CMF05 TOSHIBA Fast Recovery Diode Silicon Diffused Type CMF05 Unit: mm High-Speed Rectifier Applications (Fast Recovery) Switching Mode Power Supply Applications DC-DC Converter Applications Repetitive peak reverse voltage: V = 1000 V RRM Average forward current: I = 0.5 A F (AV) Forward voltage: V = 2.7 V (max) FM Very fast reverse-recovery time: t = 100 ns (max) rr Suitable for compact assembly due to the use of a small 0.16 TM 1.75 0.1 surface-mount package MFLAT (Toshiba package name) + 0.2 2.4 0.1 Absolute Maximum Ratings (Ta = 25C) ANODE CATHODE Characteristic Symbol Rating Unit Repetitive peak reverse voltage V 1000 V RRM Average forward current I 0.5 (Note 1) A F (AV) JEDEC Peak one-cycle surge forward current 10 (50 Hz) I A FSM JEITA (non-repetitive) (Note 2) TOSHIBA 3-4E1A Junction temperature T 40 to 125 C j Storage temperature range T 40 to 150 C stg Weight: 0.023 g (typ.) Note 1: T = 92C Rectangular waveform ( = 180) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/ Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-02-17 0 ~ 0.1 3.8 0.1 4.7 0.2 0.98 0.1 0.65 0.2 0.65 0.2 CMF05 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Peak forward voltage V I = 0.5 A (pulse test) 2.7 V FM FM Repetitive peak reverse current I V = 800 V (pulse test) 50 A RRM RRM Reverse recovery time t I = 1 A, di/dt = 30 A/s 100 ns rr F Forward recovery time t I = 1 A 550 ns fr F Device mounted on a ceramic board (board size: 50 mm 50 mm) 60 (soldering land: 2 mm 2 mm) (board thickness: 0.64 mm) Device mounted on a glass-epoxy board (board size: 50 mm 50 mm) 135 Thermal resistance R C/W th (j-a) (soldering land: 6 mm 6 mm) (board thickness: 1.6 mm ) Device mounted on a glass-epoxy board (board size: 50 mm 50 mm) 210 (soldering land: 2.1 mm 1.4 mm) (board thickness: 1.6 mm) Thermal resistance (junction to lead) R 16 C/W th (j-) Marking Standard Soldering Pad Abbreviation Code Part No. Unit: mm F5 CMF05 1.4 3.0 1.4 Handling Precautions 1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. The following are the general derating methods we recommend for designing a circuit using this device. V : We recommend that the worst-case voltage, including surge voltage, be no greater than 80% of the absolute RRM maximum rating of V for a DC circuit and no greater than 50% of that of V for an AC circuit. RRM RRM V has a temperature coefficient (0.1%/). Be sure to take this temperature coefficient into account when RRM designing a device for use at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum rating of I . F(AV) F(AV) Carry out sufficient heat design. If it is not possible to design a circuit with excellent heat radiation, set a margin by using an allowable Ta max-I ) curve. F(AV I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom FSM occurs during the lifespan of the device. T: Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used j at a T of below 100C. j 2 2010-02-17 2.1