X-On Electronics has gained recognition as a prominent supplier of CMF05(TE12L,Q,M) Rectifiers across the USA, India, Europe, Australia, and various other global locations. CMF05(TE12L,Q,M) Rectifiers are a product manufactured by Toshiba. We provide cost-effective solutions for Rectifiers, ensuring timely deliveries around the world.

CMF05(TE12L,Q,M) Toshiba

CMF05(TE12L,Q,M) electronic component of Toshiba
CMF05(TE12L,Q,M) Toshiba
CMF05(TE12L,Q,M) Rectifiers
CMF05(TE12L,Q,M)  Semiconductors

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See Product Specifications
Part No. CMF05(TE12L,Q,M)
Manufacturer: Toshiba
Category: Rectifiers
Description: Rectifiers Super Fast Diode 1000V 0.5A 100ns
Datasheet: CMF05(TE12L,Q,M) Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
3000: USD 0.136 ea
Line Total: USD 408 
Availability - 0
MOQ: 3000  Multiples: 3000
Pack Size: 3000
Availability Price Quantity
0
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 3000
Multiples : 3000
3000 : USD 0.136
9000 : USD 0.1288

0
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 477
Multiples : 1
477 : USD 0.2586
500 : USD 0.2119
1000 : USD 0.1376

0
Ship by Mon. 13 Jan to Wed. 15 Jan
MOQ : 1
Multiples : 1
1 : USD 1.4039
10 : USD 0.6411
100 : USD 0.3169
500 : USD 0.2336
1000 : USD 0.1755
3000 : USD 0.1604

0
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 477
Multiples : 1
477 : USD 0.2586

0
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 53
Multiples : 1
53 : USD 0.2787
100 : USD 0.2004
250 : USD 0.182
500 : USD 0.1784

0
Ship by Wed. 15 Jan to Tue. 21 Jan
MOQ : 477
Multiples : 1
477 : USD 0.2638

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Max Surge Current
Ir - Reverse Current
Recovery Time
Series
Packaging
Product
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
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We are delighted to provide the CMF05(TE12L,Q,M) from our Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMF05(TE12L,Q,M) and other electronic components in the Rectifiers category and beyond.

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CMF05 TOSHIBA Fast Recovery Diode Silicon Diffused Type CMF05 Unit: mm High-Speed Rectifier Applications (Fast Recovery) Switching Mode Power Supply Applications DC-DC Converter Applications Repetitive peak reverse voltage: V = 1000 V RRM Average forward current: I = 0.5 A F (AV) Forward voltage: V = 2.7 V (max) FM Very fast reverse-recovery time: t = 100 ns (max) rr Suitable for compact assembly due to the use of a small 0.16 TM 1.75 0.1 surface-mount package MFLAT (Toshiba package name) + 0.2 2.4 0.1 Absolute Maximum Ratings (Ta = 25C) ANODE CATHODE Characteristic Symbol Rating Unit Repetitive peak reverse voltage V 1000 V RRM Average forward current I 0.5 (Note 1) A F (AV) JEDEC Peak one-cycle surge forward current 10 (50 Hz) I A FSM JEITA (non-repetitive) (Note 2) TOSHIBA 3-4E1A Junction temperature T 40 to 125 C j Storage temperature range T 40 to 150 C stg Weight: 0.023 g (typ.) Note 1: T = 92C Rectangular waveform ( = 180) Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/ Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2010-02-17 0 ~ 0.1 3.8 0.1 4.7 0.2 0.98 0.1 0.65 0.2 0.65 0.2 CMF05 Electrical Characteristics (Ta = 25C) Characteristic Symbol Test Condition Min Typ. Max Unit Peak forward voltage V I = 0.5 A (pulse test) 2.7 V FM FM Repetitive peak reverse current I V = 800 V (pulse test) 50 A RRM RRM Reverse recovery time t I = 1 A, di/dt = 30 A/s 100 ns rr F Forward recovery time t I = 1 A 550 ns fr F Device mounted on a ceramic board (board size: 50 mm 50 mm) 60 (soldering land: 2 mm 2 mm) (board thickness: 0.64 mm) Device mounted on a glass-epoxy board (board size: 50 mm 50 mm) 135 Thermal resistance R C/W th (j-a) (soldering land: 6 mm 6 mm) (board thickness: 1.6 mm ) Device mounted on a glass-epoxy board (board size: 50 mm 50 mm) 210 (soldering land: 2.1 mm 1.4 mm) (board thickness: 1.6 mm) Thermal resistance (junction to lead) R 16 C/W th (j-) Marking Standard Soldering Pad Abbreviation Code Part No. Unit: mm F5 CMF05 1.4 3.0 1.4 Handling Precautions 1) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded, even for a moment. Do not exceed any of these ratings. The following are the general derating methods we recommend for designing a circuit using this device. V : We recommend that the worst-case voltage, including surge voltage, be no greater than 80% of the absolute RRM maximum rating of V for a DC circuit and no greater than 50% of that of V for an AC circuit. RRM RRM V has a temperature coefficient (0.1%/). Be sure to take this temperature coefficient into account when RRM designing a device for use at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum rating of I . F(AV) F(AV) Carry out sufficient heat design. If it is not possible to design a circuit with excellent heat radiation, set a margin by using an allowable Ta max-I ) curve. F(AV I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal operation, which seldom FSM occurs during the lifespan of the device. T: Derate this rating when using a device in order to ensure high reliability. We recommend that the device be used j at a T of below 100C. j 2 2010-02-17 2.1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4
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