CMH04 TOSHIBA High-Efficiency Diodes Silicon Epitaxial Type CMH04 Unit: mm Switching Mode Power Supply Applications Repetitive peak reverse voltage: V = 200 V RRM Average forward current: I = 1 A F (AV) Low forward voltage: V =0.98 V (Max) I = 1 A FM FM Very Fast Reverse-Recovery Time: trr = 35 ns (Max) Suitable for compact assembly due to small surface-mount package TM M FLAT (Toshiba package name) Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 200 V RRM Average forward current I 1 Note 1 A F (AV) Peak one cycle surge forward current I 20 (50 Hz) A FSM (non-repetitive) Junction temperature T 40 to 150 C j Storage temperature range T 40 to 150 C stg Note 1: Ta=26C Device mounted on a glass-epoxy board board size: 50 mm 50 mm JEDEC soldering land: 6 mm 6 mm glass-epoxy board thickness: 1.6 mm JEITA Note: Using continuously under heavy loads (e.g. the application of TOSHIBA 3-4E1A high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the Weight: 0.023 g (typ.) reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 0.1 A (pulse test) 0.70 FM (1) FM Peak forward voltage V I = 0.7 A (pulse test) 0.84 V FM (2) FM V I = 1 A (pulse test) 0.87 0.98 FM (3) FM Peak repetitive reverse current I V = 200 V (pulse test) 10 A RRM RRM Reverse recovery time t I = 1 A, di/dt = 30 A/s 35 ns rr F Forward recovery time t I = 1 A 100 ns fr F Device mounted on a ceramic board (board size: 50 mm 50 mm) 60 (soldering land: 2 mm 2 mm) (board thickness: 0.64 mm) Device mounted on a glass-epoxy board Thermal resistance (board size: 50 mm 50 mm) R 135 C/W th (j-a) (junction to ambient) (soldering land: 6 mm 6 mm) (board thickness: 1.6 mm) Device mounted on a glass-epoxy board (board size: 50 mm 50 mm) 210 (soldering land: 2.1 mm 1.4 mm) (board thickness: 1.6 mm) Thermal resistance R 16 C/W th (j-) (junction to lead) Start of commercial production 2002-12 1 2017-12-25 CMH04 Marking Abbreviation Code Part No. H4 CMH04 Land pattern dimensions for reference only Unit: mm 1.4 3.0 1.4 Handling Precaution The absolute maximum ratings denote the absolute maximum ratings, which are rated values and must not be exceeded during operation, even for an instant. The following are the general derating methods that we recommend when you design a circuit with a device. V : We recommend that the worst case voltage, including surge voltage, be no greater than 80% of the absolute RRM maximum rating of V for a DC circuit and be no greater than 50% of that of V for an AC circuit. RRM RRM V has a temperature coefficient of 0.1%/C. Take this temperature coefficient into account designing a RRM device at low temperature. I : We recommend that the worst case current be no greater than 80% of the absolute maximum rating of I . F(AV) F(AV) Carry out adequate heat design. If you cant design a circuit with excellent heat radiation, set the margin by using an allowable Tamax-I curve. F (AV) This rating specifies the non-repetitive peak current in one cycle of a 50-Hz sine wave, condition angle 180. Therefore, this is only applied for an abnormal operation, which seldom occurs during the lifespan of the device. We recommend that a device be used at a Tj of below 120C under the worst load and heat radiation conditions. Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. Please refer to the Rectifiers databook for further information. 2 2017-12-25 2.1