S1DB Taiwan Semiconductor

S1AB S1MB Taiwan Semiconductor 1A, 50V - 1000V Standard Surface Mount Rectifier FEATURES KEY PARAMETERS Glass passivated chip junction PARAMETER VALUE UNIT Ideal for automated placement I 1 A F Low forward voltage drop V 50 - 1000 V RRM High surge current capability I 30 A Moisture sensitivity level: level 1, per J-STD-020 FSM RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AA (SMB) Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test DO-214AA (SMB) Polarity: Indicated by cathode band Weight: 0.090g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL S1AB S1BB S1DB S1GB S1JB S1KB S1MB UNIT Marking code on the device S1AB S1BB S1DB S1GB S1JB S1KB S1MB Repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Reverse voltage, total rms value V 35 70 140 280 420 560 700 V R(RMS) Forward current I 1 A F Surge peak forward current, 8.3ms single half sine-wave superimposed I 30 A FSM on rated load Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version: I2102 S1AB S1MB Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance R 30 C/W JL ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT (1) - 1.1 Forward voltage I = 1A,T = 25C V V F J F - 5 T = 25C A J (2) Reverse current rated V I R R - 50 T = 125C A J Junction capacitance 1MHz, V = 4.0V C 12 - pF R J Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING S1xB DO-214AA (SMB) 3,000 / Tape & Reel Notes: 1. defines voltage from 50V(S1AB) to 1000V(S1MB) 2 Version: I2102