S1D R3G Taiwan Semiconductor

S1A - S1M Taiwan Semiconductor CREAT BY ART 1A, 50V - 1000V Surface Mount Rectifiers FEATURES - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition - AEC-Q101 qualified available MECHANICAL DATA Case: DO-214AC (SMA) DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL S1A S1B S1D S1G S1J S1K S1M UNIT Maximum repetitive peak reverse voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS voltage V 35 70 140 280 420 560 700 V RMS Maximum DC blocking voltage V 50 100 200 400 600 800 1000 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 40 30 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 1.1 V F 1 A 1 Maximum reverse current rated VR T =25 C J I A R T =125 C 50 J Typical reverse recovery time (Note 2) t 1.5 s rr Typical junction capacitance (Note 3) C 12 pF J Non-repetitive peak reverse avalanche E 5 mJ RSM energy at 25, I =1A, L=10mH AS R 27 30 JL Typical thermal resistance C/W R 75 85 JA Operating junction temperature range T - 55 to +175 C J Storage temperature range T - 55 to +175 C STG Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Document Number: DS D1411068 Version: P15S1A - S1M Taiwan Semiconductor ORDER INFORMATION (EXAMPLE) S1AR3G Greencompoundcode Packingcode Partno. RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG.1 FORWARD CURRENT DERATING CURVE FIG. 2 TYPICAL REVERSE CHARACTERISTICS 100 1.2 1 10 0.8 T =125C J 1 0.6 0. 1 T =75C 0.4 J RESISTIVE OR INDUCTIVE LOAD 0. 01 0.2 T =25C J 0 0. 001 0 255075 100 125 150 175 0 20 40 60 80 100 120 140 o PERCENT OF RATED PEAK REVERSE VOLTAGE (%) LEAD TEMPERATURE ( C) FIG. 4 TYPICAL FORWARD CHARACTERISTICS FIG. 3 MAXIMUM NON-REPETITIVE FORWARD 100 SURGE CURRENT 100 8.3ms Single Half Sine Wave 10 S1A-S1K 10 S1M 1 Pulse Width=300s 1% Duty Cycle 1 1 10 100 0. 1 NUMBER OF CYCLES AT 60 Hz 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 FORWARD VOLTAGE (V) Document Number: DS D1411068 Version: P15 PEAK FORWARD SURGE URRENT AVERAGE FORWARD CURRENT (A) (A) INSTANTANEOUS REVERSE CURRENT INSTANTANEOUS FORWARD CURRENT (A) (A)