VS-3EGU06WHM3
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Vishay Semiconductors
Ultrafast Rectifier, 3 A FRED Pt
FEATURES
Ultrafast recovery time, reduced Q and soft
rr
recovery
175 C maximum operating junction temperature
For PFC CRM/CCM, snubber operation
Low forward voltage drop
Cathode Anode
Low leakage current
Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 C
SMB (DO-214AA)
AEC-Q101 qualified meets JESD 201 class 2 whisker test
Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
State of the art ultrafast recovery rectifiers designed with
PRIMARY CHARACTERISTICS
optimized performance of forward voltage drop, ultrafast
I 3 A
F(AV)
recovery time, and fast recovery.
V 600 V
R
The planar structure and the platinum doped life time control
V at I 0.99 V
F F guarantee the best overall performance, ruggedness and
reliability characteristics.
t typ. 41 ns
rr
These devices are intended for use in PFC Boost stage in
T max. 175 C
J
the AC/DC section of SMPS, inverters or as freewheeling
Package SMB (DO-214AA)
diodes.
Circuit configuration Single
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS
Peak repetitive reverse voltage V 600 V
RRM
(1)
Average rectified forward current I T = 110 C 3
F(AV) L
A
Non-repetitive peak surge current per leg I T = 25 C, 6 ms square pulse 55
FSM J
Operating junction and storage temperatures T , T -55 to +175 C
J Stg
Note
(1)
Mounted on PCB with minimum pad size
ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Breakdown voltage, V ,
BR
I = 100 A 600 - -
R
blocking voltage V
R
V
I = 3 A - 1.15 1.35
F
Forward voltage V
F
I = 3 A, T = 150 C - 0.99 1.2
F J
V = V rated - - 3
R R
Reverse leakage current I A
R
T = 150 C, V = V rated - - 100
J R R
Junction capacitance C V = 600 V - 3.9 - pF
T R
Revision: 09-Sep-2019 Document Number: 95852
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-3EGU06WHM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 41 -
F F R
I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 52 -
F F R
Reverse recovery time t I = 0.5 A, I = 1 A, I = 0.25 A - - 65 ns
rr F R rr
= 25 C
T -38 -
J
T = 125 C - 52 -
J
I = 3 A
F
T = 25 C - 5.6 -
J
Peak recovery current I dI /dt = 200 A/s A
RRM F
T = 125 C - 7.3 -
J
V = 390 V
R
T = 25 C - 108 -
J
Reverse recovery charge Q nC
rr
T = 125 C - 193 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
T , T -55 - +175 C
J Stg
temperature range
(1)
Thermal resistance, junction to case R --18
thJC
C/W
(1)
Thermal resistance, junction to ambient R -- 90
thJA
0.1 g
Approximate Weight
0.003 oz.
Marking device Case style SMB (DO-214AA) 3U6H
Note
(1)
Mounted on PCB with minimum pad size
Revision: 09-Sep-2019 Document Number: 95852
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000