VS-3EJH02-M3/6B Vishay

333 3 VS-3EJH02-M3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 3 A FRED Pt FEATURES eSMP Series Hyperfast recovery time, reduced Q , and soft rr recovery 175 C maximum operating junction temperature Low forward voltage drop Low leakage current Bottom View Top View Specific for output and snubber operation Meets MSL level 1, per J-STD-020, LF maximum peak SlimSMA (DO-221AC) of 260 C Meets JESD 201 class 2 whisker test Cathode Anode Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES State of the art hyperfast recovery rectifiers specifically designed with optimized performance of forward voltage drop and hyperfast recovery time. 3D Models The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness and PRIMARY CHARACTERISTICS reliability characteristics. I 3 A These devices are intended for use in snubber, boost, F(AV) lighting, as high frequency rectifiers and freewheelin g V 200 V R diodes. V at I 0.74 V F F The extremely optimized stored charge and low recovery t 30 ns rr current minimize the switching losses and reduce power T max. 175 C J dissipation in the switching element. Package SlimSMA (DO-221AC) MECHANICAL DATA Circuit configuration Single Case: SlimSMA (DO-221AC) Molding compound meets UL 94 V-0 flammability rating Terminals: matte tin plated leads, solderable per J-STD-002 Polarity: color band denotes cathode end ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS Peak repetitive reverse voltage V 200 V RRM (1) Average rectified forward current I T = 145 C 3 F(AV) C A Non-repetitive peak surge current I T = 25 C 85 FSM J Operating junction and storage temperatures T , T -65 to +175 C J Stg Note (1) Device on PCB with 8 mm x 16 mm soldering lands ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Breakdown voltage, blocking voltage V , V I = 100 A 200 - - BR R R I = 3 A - 0.86 0.93 V F Forward voltage V F I = 3 A, T = 125 C - 0.74 0.78 F J V = V rated - - 2 R R Reverse leakage current I A R T = 125 C, V = V rated - 1 8 J R R Junction capacitance C V = 200 V - 13 - pF T R Revision: 28-Jan-2021 Document Number: 94879 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-3EJH02-M3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 26 - F F R I = 0.5 A, I = 1 A, I = 0.25 A - - 30 F R rr Reverse recovery time t ns rr T = 25 C -18- J T = 125 C - 26 - J I = 3 A F T = 25 C - 2.5 - J Peak recovery current I dI /dt = 200 A/s A RRM F T = 125 C - 4 - J V = 160 V R T = 25 C - 23 - J Reverse recovery charge Q nC rr T = 125 C - 50 - J THERMAL - MECHANICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and T , T -65 - 175 C J Stg storage temperature range Thermal resistance, Device mounted on PCB with R -8 10 thJM junction to mount 8 mm x 16 mm soldering lands C/W Thermal resistance, Device mounted on PCB with R - 91 110 thJA junction to ambient 2 mm x 3.5 mm soldering lands 0.032 g Approximate Weight 0.0011 oz. Marking device Case style SlimSMA (DO-221AC) 3H2 100 100 T = 175 C J 10 T = 150 C J T = 175 C 1 10 J T = 125 C J 0.1 T = 150 C J 0.01 1 T = 125 C J T = 25 C J T = 25 C 0.001 J T = -40 C J 0.0001 0.1 0 50 100 150 200 0.3 0.5 0.7 0.9 1.1 1.3 1.5 V - Reverse Voltage (V) V - Forward Voltage Drop (V) R F Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Revision: 28-Jan-2021 Document Number: 94879 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Instantaneous Forward Current (A) F I - Reverse Current (A) R