333 3 VS-3EYH01HM3, VS-3EYH02HM3 www.vishay.com Vishay Semiconductors Hyperfast Rectifier, 3 A FRED Pt FEATURES eSMP Series Low profile package Ideal for automated placement Low forward voltage drop, low power losses Low leakage current Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C Top View Bottom View AEC-Q101 qualified, class 2 whisker test Compatible to SOD-128 package case outline SlimSMAW (DO-221AD) Material categorization: for definitions of compliance Cathode Anode please see www.vishay.com/doc 99912 DESCRIPTION / APPLICATIONS LINKS TO ADDITIONAL RESOURCES For use in high frequency, freewheeling, DC/DC converters, PFC, and in snubber industrial, and automotiv e applications. 3D Models MECHANICAL DATA PRIMARY CHARACTERISTICS Case: SlimSMAW (DO-221AD) Molding compound meets UL 94 V-0 flammability rating I 3 A F(AV) Halogen-free, RoHS-compliant V 100 V, 200 V R Terminals: matte tin plated leads, solderable per V at I 0.71 V F F J-STD-002 I 70 A FSM Polarity: color band denotes cathode end t (typ.) 16 ns rr T max. 175 C J Package SlimSMAW (DO-221AD) Circuit configuration Single ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOLTEST CONDITIONSVALUESUNITS VS-3EYH01HM3 100 Peak repetitive reverse voltage V V RRM VS-3EYH02HM3 200 (1) Average rectified forward current I T = 137 C 3 A F(AV) C Non-repetitive peak surge current I T = 25 C, 10 ms sine pulse wave 70 FSM J Operating junction and storage temperatures T , T -55 to +175 C J Stg Note (1) Mounted on infinite heatsink ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS VS-3EYH01HM3 V , V 100 - - BR R Breakdown voltage, blocking I = 100 A R voltage VS-3EYH02HM3 200 - - V I = 3 A - 0.86 0.95 F Forward voltage, per diode V F I = 3 A, T = 150 C - 0.71 0.79 F J V = V rated - - 2 R R Reverse leakage current, per diode I A R T = 150 C, V = V rated - - 20 J R R Junction capacitance C V = 200 V - 16 - pF T R Revision: 28-Jan-2021 Document Number: 96384 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 DDD D VS-3EYH01HM3, VS-3EYH02HM3 www.vishay.com Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified) J PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS I = 1.0 A, dI /dt = 50 A/s, V = 30 V - 22 - F F R I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 16 - F F R Reverse recovery time t I = 0.5 A, I = 1A, I = 0.25 A - - 30 ns rr F R rr T = 25 C -18- J T = 125 C - 30 - J I = 3 A, F T = 25 C - 2.5 - J Peak recovery current I dI /dt = 200 A/s, A RRM F T = 125 C - 4 - J V = 100 V R T = 25 C - 23 - J Reverse recovery charge Q nC rr T = 125 C - 60 - J THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS Maximum junction and storage temperature range T , T -55 - 175 C J Stg (1) Thermal resistance, junction to mount R Infinite heatsink - 12 15 thJM C/W Device mounted on FR4 PCB, Thermal resistance, junction to ambient R - 120 150 thJA 2 oz. standard footprint VS-3EYH01HM3 3H1 Marking device Case style SlimSMAW (DO-221AD) VS-3EYH02HM3 3H2 Note (1) Thermal resistance junction to mount follows JEDEC 51-14 transient dual interface test method (TDIM) Revision: 28-Jan-2021 Document Number: 96384 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000