S1D-T - S1M-T Taiwan Semiconductor CREAT BY ART 1A, 200V - 1000V Surface Mount Rectifiers FEATURES - Glass passivated chip junction - Ideal for automated placement - Low forward voltage drop - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA DO-214AC (SMA) Case: DO-214AC (SMA) Molding compound: UL flammability classification rating 94V-0 Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A S1D S1G S1J S1K S1M PARAMETER SYMBOL UNIT -T -T -T -T -T Marking code S1D S1G S1J S1K S1M Maximum repetitive peak reverse voltage V 200 400 600 800 1000 V RRM Maximum RMS voltage V 140 280 420 560 700 V RMS Maximum DC blocking voltage V 200 400 600 800 1000 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 40 30 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 1.1 V F 1 A T =25C 1 J Maximum reverse current rated V I A R R T =125C 50 J Typical reverse recovery time (Note 2) t 1.5 s rr Typical junction capacitance (Note 3) C 12 pF J R 30 JL Typical thermal resistance C/W R 85 JA T Operating junction temperature range - 55 to +175 C J Storage temperature range T - 55 to +175 C STG Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Test conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and applied reverse voltage of 4.0V DC. Version: C1910S1D-T - S1M-T Taiwan Semiconductor ORDERING INFORMATION PACKING CODE PART NO. PACKING CODE PACKAGE PACKING SUFFIX R3 SMA 1,800 / 7 Plastic reel S1x-T R2 G SMA 7,500 / 13 Paper reel (Note 1, 2) M2 SMA 7,500 / 13 Plastic reel Note 1: defines voltage from 200V (S1D-T) to 1000V (S1M-T) Note 2: Whole series with green compound EXAMPLE EXAMPLE PACKING CODE PART NO. PACKING CODE DESCRIPTION PART NO. SUFFIX S1M-T R3G S1M-T R3 G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG. 2 TYPICAL REVERSE CHARACTERISTICS FIG.1 FORWARD CURRENT DERATING CURVE 1.2 100 1 10 T =125 C 0.8 J 1 0.6 0.1 T =75 C J 0.4 0.01 T =25 C J 0.2 Resistive or inductive load 0 0.001 0 25 50 75 100 125 150 175 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) LEAD TEMPERATURE ( C) Fig. 3.4 FIG. 3 MAXIMUM NON-REPETITIVE FORWARD FIG. 4 TYPICAL FORWARD CHARACTERISTICS SURGE CURRENT 100 100 8.3ms single half sine wave 10 S1D-T~S1K-T 10 S1M-T Fig.5 1 Pulse width=300s 1% duty cycle 1 0.1 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 1 10 100 FORWARD VOLTAGE (V) NUMBER OF CYCLES AT 60 Hz Version: C1910 PEAK FORWARD SURGE URRENT(A) AVERAGE FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A)