S1JM RSG Taiwan Semiconductor

S1GM - S1JM Taiwan Semiconductor 1A, 400V - 600V Surface Mount Rectifier FEATURES KEY PARAMETERS AEC-Q101 qualified PARAMETER VALUE UNIT Ideal for automated placement I 1 A F(AV) Low forward voltage drop V 400 - 600 V RRM Glass passivated chip junction I 20 A Moisture sensitivity level: level 1, per J-STD-020 FSM RoHS Compliant T 175 C J MAX Halogen-free according to IEC 61249-2-21 Package Micro SMA APPLICATIONS Converter Free wheeling LED lighting Adapters MECHANICAL DATA Case: Micro SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.006 g (approximately) Micro SMA ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL S1GM S1JM UNIT Marking code on the device A5 A7 Repetitive peak reverse voltage V 400 600 V RRM Forward current I 1 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave superimposed on I 20 A FSM rated load per diode Junction temperature T - 55 to +175 C J Storage temperature T - 55 to +175 C STG 1 Version:H1909 S1GM - S1JM Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead Thermal Resistance R 30 C/W JL Junction-to-ambient thermal resistance R 110 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP MAX UNIT (1) - 1.10 Forward voltage per diode I = 1A,T = 25C V V F J F - 1 T = 25C A J (2) Reverse current rated V per diode I R R - 50 T = 125C A J 5 - pF Junction capacitance 1 MHz, V =4.0V C R J I =0.5A ,I =1.0A F R ns Reverse recovery time t 780 - rr I =0.25A RR Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms ORDERING INFORMATION (1) ORDERING CODE PACKAGE PACKING S1GMHRSG Micro SMA 3000 / 7 Plastic reel S1JMHRSG Micro SMA 3000 / 7 Plastic reel S1GM RSG Micro SMA 3000 / 7 Plastic reel S1JM RSG Micro SMA 3000 / 7 Plastic reel Note : 1. H means AEC-Q101 qualified 2 Version:H1909