S4M R7 Taiwan Semiconductor

CREAT BY ART S4A - S4M 4.0 AMPS. Surface Mount Rectifiers SMC/DO-214AB RoHRoHSS Pb COCOMMPPLILIANANCCEE Features For surface mounted application Glass passivated junction chip. Low forward voltage drop High current capability Easy pick and place High surge current capability Plastic material used carries Underwriters Laboratory Classification 94V-0 High temperature soldering: 260 /10 seconds at terminals Green compound with suffix on packing code & prefix on datecode. Dimensions in inches and (millimeters) Mechanical Data Case: Molded plastic Marking Diagram Terminals: Pure tin plated, lead free. S4X = Specific Device Code Polarity: Indicated by cathode band G = Green Compound Packaging: 16mm tape per EIA STD RS-481 Y = Year Weight: 0.21 grams M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol S4A S4B S4D S4G S4J S4K S4M Units Type Number Maximum Recurrent Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 4 A F(AV) T =75 L Peak Forward Surge Current, 8.3 ms Single Half Sine- I 100 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.15 V F 4 A Maximum DC Reverse Current T =25 A 10 uA I R 250 uA at Rated DC Blocking Voltage T =125 A Typical Reverse Recovery Time (Note 2) Trr 1.5 uS Typical Junction Capacitance (Note 3) Cj 60 pF R JL 13 O Typical Thermal Resistance C/W R 47 JA O Operating Temperature Range T - 55 to + 150 J C O Storage Temperature Range T - 55 to + 150 C STG Notes: 1. Pulse Test with PW=300 usec, 1% Duty Cycle 2. Reverse Recovery Test Conditions: I F=0.5A, IR=1.0A, IRR=0.25A 3. Measured at 1 MHz and Applied V R=4.0 Volts Version:E11RATINGS AND CHARACTERISTIC CURVES (S4A THRU S4M) FIG.2- TYPICAL REVERSE CHARACTERISTICS FIG.1- MAXIMUM FORWARD CURRENT DERATING 100 CURVE 4.5 4.0 3.5 TA=125 3.0 2.5 10 2.0 1.5 1.0 RESISTIVE OR INDUCTIVE LOAD 0.5 0.0 50 60 70 80 90 100 110 120 130 140 150 160 1 o LEAD TEMPERATURE. ( C) TA=25 0.1 FIG.3- MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 0 20 40 60 80 100 120 140 100 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 8.3ms Single Half Sine Wave JEDEC Method 10 1 10 100 FIG.5- TYPICAL FORWARD CHARACTERISRICS NUMBER OF CYCLES AT 60 Hz 100 10 FIG.4- TYPICAL JUNCTION CAPACITANCE 100 1 TA=25 10 f=1.0MHz Vsig=50mVp-p 0.1 TA=25 PULSE WIDTH-300us 1% DUTY CYCLE 0.01 1 1 10 100 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 REVERSE VOLTAGE. (V) FORWARD VOLTAGE (V) Version:E11 PEAK FORWARD SURGE AVERAGE FORWARD JUNCTION CAPACITANCE.(pF) CURRENT. (A) CURRENT.(A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (uA)