SD101AW - SD101CW Taiwan Semiconductor Small Signal Product Surface Mount, Switching Schottky Barrier Diode FEATURES - Low forward voltage drop - Guard ring construction for transient protection - Negligible reverse recovery time - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 SOD-123 MECHANICAL DATA - Case: SOD-123 small outline plastic package - Molding compound meets UL 94 V-0 flammability rating - Terminal: Matte tin plated, lead free, solderable per MIL-STD-202, Method 208 guaranteed - High temperature soldering guaranteed : 260C/10s - Polarity: Indicated by cathode band - Weight: 0.01 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL SD101AW SD101BW SD101CW UNIT Peak Repetitive Reverse Voltage V RRM Working Peak Reverse Voltage V 60 50 40 V RWM DC Blocking Voltage V R RMS Reverse Voltage V 42 35 28 V R(RMS) Forward Continue Current (Note 1) I 15 mA FM Non-Repetitive Peak Forward Surge Current t 1 s 50 mA I FSM t = 10 s 2 A Power Dissipation (Note 1) P 400 mW D Thermal Resistance Junction to Ambient (Note 1) R 300 C/W JA Operating and Storage Temperature Range T , T -65 to +125 C J STG Note 1: Valid provided that terminals are kept at ambient temperature. Version: C1601SD101AW - SD101CW Taiwan Semiconductor Small Signal Product PARAMETER SYMBOL MIN MAX UNIT Reverse Breakdown Voltage I = 10 A 60 - SD101AW R V V (BR) SD101BW I = 10 A 50 - R I = 10 A 40 - SD101CW R Peak Reverse Current SD101AW V = 50 V R SD101BW V = 40 V I - 200 nA R R V = 30 V SD101CW R Forward Voltage Drop SD101AW I = 1.0 mA 0.41 R I = 1.0 mA 0.40 (Note 2) SD101BW R SD101CW I = 1.0 mA 0.39 R V - V F I = 15 mA 1.00 SD101AW R SD101BW I = 15 mA 0.95 R I = 15 mA 0.90 SD101CW R V = 0 V , f = 1.0 MHz Junction Capacitance R SD101AW 2.0 C - pF J SD101BW 2.1 SD101CW 2.2 I = I = 5.0 mA Reverse Recovery Time F R t - 1.0 ns rr I = 0.1 I , R = 100 rr R L Note 2: Pulse test: pulse width = 300 s , duty cycle 2%. RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A Fig.1 Typical Forward Characteristics Fig. 2 Typ. Junction Capacitance VS. Reverse Voltage 2 10 A 1 B 1 C 0.1 C B A 0.01 0 0 0.5 1 0 10 20 30 40 50 V , Reverse Voltage (V) V , Forward Voltage (mV) R F Version: C1601 I , Forward Current (mA) F C , Capacitance (pF) j