SK59C V7G Taiwan Semiconductor

SK52C - SK520C Taiwan Semiconductor 5A, 20V - 200V Surface Mount Schottky Barrier Rectifier FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 5 A F(AV) Guard ring for over-voltage protection V 20 - 200 V RRM High surge current capability Compliant to RoHS Directive 2011/65/EU and I 120 A FSM in accordance to WEEE 2002/96/EC T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AB (SMC) Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test DO-214AB (SMC) Polarity: As marked Weight: 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A SK SK SK SK SK SK SK SK SK SYMBOL UNIT PARAMETER 52C 53C 54C 55C 56C 59C 510C 515C 520C SK SK SK SK SK SK SK SK SK Marking code on the device 52C 53C 54C 55C 56C 59C 510C 515C 520C Repetitive peak reverse voltage V 20 30 40 50 60 90 100 150 200 V RRM Reverse voltage, total rms value V 14 21 28 35 42 63 70 105 140 V R(RMS) Maximum DC blocking voltage V 20 30 40 50 60 90 100 150 200 V DC Forward current I 5 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave superimposed I 120 A FSM on rated load per diode Critical rate of rise of off-state dV/dt 10,000 V/s voltage Junction temperature T - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:P1903 SK52C - SK520C Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode R 17 C/W JL Junction-to-ambient thermal resistance per diode R 50 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT SK52C SK53C - 0.55 V SK54C SK55C - 0.75 V (1) Forward voltage per diode SK56C I = 5A, T = 25C V F J F SK59C - 0.85 V SK510C SK515C - 0.95 V SK520C SK52C SK53C SK54C - 0.5 mA SK55C Reverse current rated V R SK56C T = 25C I (2) J R per diode SK59C SK510C - 0.3 mA SK515C SK520C SK52C SK53C - 20 mA SK54C SK55C Reverse current rated V - 10 mA R SK56C T = 100C I (2) J R per diode SK59C SK510C - - mA SK515C SK520C SK52C SK53C - - mA SK54C SK55C Reverse current rated V - - mA R SK56C T = 125C I (2) J R per diode SK59C SK510C - 5 mA SK515C SK520C Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:P1903