SK86C V7G Taiwan Semiconductor

SK82C - SK810C Taiwan Semiconductor 8A, 20V - 100V Surface Mount Schottky Barrier Rectifier FEATURES KEY PARAMETERS Low power loss, high efficiency PARAMETER VALUE UNIT Ideal for automated placement I 8 A F(AV) Guard ring for over-voltage protection V 20 - 100 V RRM High surge current capability Compliant to RoHS Directive 2011/65/EU and I 150 A FSM in accordance to WEEE 2002/96/EC Package DO-214AB (SMC) Halogen-free according to IEC 61249-2-21 Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application Converter MECHANICAL DATA Case: DO-214AB (SMC) Molding compound meets UL 94V-0 flammability rating Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Moisture sensitivity level: level 1, per J-STD-020 Terminal: Matte tin plated leads, solderable per J-STD-002 DO-214AB (SMC) Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.21 g (approximately) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A SK SK SK SK SK SK SYMBOL UNIT PARAMETER 82C 83C 84C 85C 86C 810C SK SK SK SK SK SK Marking code on the device 82C 83C 84C 85C 86C 810C Repetitive peak reverse voltage V 20 30 40 50 60 100 V RRM Reverse voltage, total rms value V 14 21 28 35 42 70 V R(RMS) Maximum DC blocking voltage V 20 30 40 50 60 100 V DC Forward current I 8 A F(AV) Surge peak forward current, 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load per diode Critical rate of rise of off-state dV/dt 10,000 V/s voltage Junction temperature T - 55 to +125 - 55 to +150 C J Storage temperature T - 55 to +150 C STG 1 Version:K1903 SK82C - SK810C Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance per diode R 20 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL TYP. MAX. UNIT SK82C SK83C - 0.55 V SK84C (1) Forward voltage per diode I = 8A, T = 25C V F J F SK85C - 0.75 V SK86C SK810C - 0.90 V (2) Reverse current rated V per diode T = 25C I - 0.5 mA R J R SK82C SK83C - 15 mA SK84C Reverse current rated V R T = 100C I (2) J R per diode SK85C SK86C - 10 mA SK810C Notes: 1. Pulse test with PW=0.3 ms 2. Pulse test with PW=30 ms 2 Version:K1903