X-On Electronics has gained recognition as a prominent supplier of SMA4F36AH MWG ESD Suppressors / TVS Diodes across the USA, India, Europe, Australia, and various other global locations. SMA4F36AH MWG ESD Suppressors / TVS Diodes are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for ESD Suppressors / TVS Diodes, ensuring timely deliveries around the world.

SMA4F36AH MWG Taiwan Semiconductor

SMA4F36AH MWG electronic component of Taiwan Semiconductor
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Part No.SMA4F36AH MWG
Manufacturer: Taiwan Semiconductor
Category: ESD Suppressors / TVS Diodes
Description: ESD Suppressors TVS Diodes 400W 42.35V 5% Unidirectional TVS
Datasheet: SMA4F36AH MWG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4829 ea
Line Total: USD 0.48 
Availability - 13574
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
13574
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4829
10 : USD 0.4158
100 : USD 0.2926
500 : USD 0.2354
1000 : USD 0.1958
2500 : USD 0.1815
14000 : USD 0.1694
28000 : USD 0.1661
42000 : USD 0.1639

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Qualification
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Brand
Pd - Power Dissipation
Factory Pack Quantity :
Subcategory
Vf - Forward Voltage
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We are delighted to provide the SMA4F36AH MWG from our ESD Suppressors / TVS Diodes category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SMA4F36AH MWG and other electronic components in the ESD Suppressors / TVS Diodes category and beyond.

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SMA4F12AH - SMA4F60AH Taiwan Semiconductor 400W, 12V 60V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS AEC-Q101 qualified PARAMETER VALUE UNIT Glass passivated junction chip V 12 60 V WM Maximum V temperature coefficient: 0.095%/C BR V 13.4 74.1 V BR Moisture sensitivity level: level 1, per J-STD-020 Compliant to RoHS directive 2011/65/EU and P 400 W PPM in accordance to WEEE 2002/96/EC T 175 C J MAX Halogen-free according to IEC 61249-2-21 Package Thin SMA APPLICATIONS Switching mode power supply (SMPS) Motor for BLDC Lighting application Battery Management System Automotive MECHANICAL DATA Case: Thin SMA Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Thin SMA Meet JESD 201 class 2 whisker test Polarity: Uni-directional Weight: 30mg ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Non-repetitive peak impulse power dissipation with (1) P 400 W PPM 10/1000us waveform (2) Steady state power dissipation at T =25C P 7.5 W L D (3) Forward Voltage I =25A for Uni-directional only V 3.5 V F F Junction temperature T -55 to +175 C J Storage temperature T -55 to +175 C STG Notes: 1. Non-repetitive current pulse per fig. 3 and derated above T =25C per fig. 1 A 2. Units mounted on PCB (5mm x 5mm Cu pad test board) 3. Pulse test with PW=0.3 ms 1 Version: B1904 SMA4F12AH - SMA4F60AH Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-lead thermal resistance per diode R 20 C/W JL Junction-to-ambient thermal resistance per diode R 62 C/W JA Junction-to-case thermal resistance per diode R 16 C/W JC Thermal Performance Note: Units mounted on PCB (5mm x 5mm Cu pad test board) ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Maximum Maximum Breakdown blocking Working Maximum peak impulse voltage Test leakage stand-off clamping current V I Marking BR T current current Part number voltage voltage I (V) code PPM I T V V I I V WM C PPM R WM (A) (Note 1) (mA) (V) (V) (A) tp =10/1000 s (Note 1) Min. Max. SMA4F12AH 4F012 13.4 14.8 1 12 1 20.5 19.5 SMA4F15AH 4F015 16.8 18.5 1 15 1 16.4 24.4 SMA4F18AH 4F018 20.1 22.2 1 18 1 13.7 29.2 SMA4F20AH 4F020 22.4 24.7 1 20 1 12.3 32.5 SMA4F21AH 4F021 23.5 25.9 1 21 1 11.7 34.1 SMA4F22AH 4F022 24.6 27.2 1 22 1 11.2 35.7 SMA4F24AH 4F024 26.8 29.6 1 24 1 10.3 39.0 SMA4F25AH 4F025 27.9 30.9 1 25 1 9.9 40.6 SMA4F26AH 4F026 29.1 32.1 1 26 1 9.5 42.2 SMA4F30AH 4F030 33.5 37.1 1 30 1 8.2 48.7 SMA4F33AH 4F033 36.9 40.8 1 33 1 7.5 53.6 SMA4F36AH 4F036 40.2 44.5 1 36 1 6.8 58.4 SMA4F39AH 4F039 43.6 48.2 1 39 1 6.3 63.3 SMA4F40AH 4F040 44.7 49.4 1 40 1 6.2 64.9 SMA4F43AH 4F043 48.1 53.1 1 43 1 5.7 69.8 SMA4F47AH 4F047 52.5 58.1 1 47 1 5.2 76.3 SMA4F51AH 4F051 57.0 63.0 1 51 1 4.8 82.8 SMA4F56AH 4F056 62.6 69.2 1 56 1 4.4 90.9 SMA4F60AH 4F060 67.1 74.1 1 60 1 4.1 97.4 Note: 1. Pulse test with PW=30 ms 2 Version: B1904

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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