SS16M Taiwan Semiconductor

creat by art SS13M - SS16M 1.0 AMP. Surface Mount Schottky Barrier Rectifier Micro SMA RoRoHSHS Pb COCOMMPPLLIIANANCECE Features Very low profile - typical height of 0.68mm Ideal for automated placement Low forward voltage drop. Low power loss. High efficiency Meet MSL level 1, per J-STD-020D, lead free maximum peak of 260 Solder dip 265 max. 10 s, per JESD 22-A111 Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC Halogen-free according to IEC 61249-2-21 definition Qualified as per AEC-Q101 Green compound Typical Application For use in low voltage high frequency inverter, freewheeling, DC to DC converter, and polarity Dimensions in inches and (millimeters) protection applications. Marking Diagram X = Device Marking Code Mechanical Data Case: Micro SMA Y = Year Molding Compound meet UL 94V-0 rate flame flammability M = Work Month rating. Terminals: Pure tin plated leads, solderable per J-STD-002B, and JESD22-B102D. Polarity: Indicated by Cathode Band Packaging: 8 mm tape per EIA Std RS-481 Weight: 0.006 grams Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbo SS13M SS14M SS16M Units Type Number l Device Marking Code AB C V Maximum Repetitive Peak Reverse Voltage 30 40 60 V RRM Maximum Average Forward Rectified Current I 1 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine-wave I 25 A FSM Superimposed on Rated Load Maximum Instantaneous Forward Voltage (Note 1) TYP. MAX. TYP. MAX. 0.5A / T =25 A 0.45 - 0.51 - 0.5A / T =125 V V A F 0.35 - 0.46 - 1.0A / T =25 A 0.52 0.55 0.64 0.68 1.0A / T =125 A 0.46 0.50 0.57 0.60 Maximum Reverse Current Rated VR TYP. MAX. TYP. MAX. T =25 A 5 50 550 uA I R T =125 A 3 10 310 mA T =150 5.3 - A 6.7 - mA Typical Junction Capacitance ( Note 2) Cj 50 40 pF R JA 125 O R Typical Thermal Resistance 30 JL C/W R 40 JC O Operating Temperature Range T -55 to + 150 J C O T Storage Temperature Range -55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Measured at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. Version:G11RATINGS AND CHARACTERISTIC CURVES (SS13M THRU SS16M) Fig.1 Maximum Forward Current Derating Curve Fig. 2 Maximum Forward Surge Current 1.2 40 8.3ms Single Half Sine-Wave 1 30 Resistive or Inductive Load 0.8 0.6 20 0.4 10 0.2 0 0 0 25 50 75 100 125 150 1 10 100 o Lead Temperature ( C) Number of Cycles at 60 Hz Fig. 4 Typical Forward Characteristics - SS16M Fig. 3 Typical Forward Characteristics - SS13M/14M 100 100 10 10 T =150 A T =150 A 1 1 T =125 0.1 T =125 A A 0.1 T =25 A T =25 A 0.01 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 Forward Voltage (V) Forward Voltage (V) Fig. 6 Typical Reverse Characteristics - SS16M Fig. 5 Typical Reverse Characteristics - SS13M/14M 100 100 10 T =150 A 10 T =150 A 1 1 T =125 T =125 A A 0.1 0.1 0.01 0.01 T =25 T =25 A A 0.001 0.001 0.0001 0.0001 10 20 30 40 50 60 70 80 90 100 10 20 30 40 50 60 70 80 90 100 Percent of Rated Peak Reverse Voltage.(%) Percent of Rated Peak Reverse Voltage.(%) Version:G11 Instantaneous Reverse Current. (mA) Average Forward Current (A) Instantaneous Forward Current (A) Instantaneous Reverse Current. (mA) Peak Forward Surge Current (A) Instantaneous Forward Current(A)