X-On Electronics has gained recognition as a prominent supplier of SS19 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. SS19 Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

SS19 Taiwan Semiconductor

SS19 electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.SS19
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Schottky Diodes & Rectifiers 1A 90V
Datasheet: SS19 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3256 ea
Line Total: USD 0.33 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 100
Multiples : 1
100 : USD 0.3276
250 : USD 0.2907
500 : USD 0.1761
1000 : USD 0.1337
2500 : USD 0.1133
5000 : USD 0.0942

0
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3256
10 : USD 0.2343
100 : USD 0.1177
1000 : USD 0.0737
2500 : USD 0.0627
7500 : USD 0.0528
22500 : USD 0.0528
45000 : USD 0.0473
97500 : USD 0.0462

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Max Surge Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
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Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

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We are delighted to provide the SS19 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SS19 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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CREAT BY ART SS12 - SS115 1.0AMP Surface Mount Schottky Barrier Rectifier SMA/DO-214AC RoRoHSHS Pb COCOMMPPLLIIANCANCEE Features For surface mounted application Easy pick and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classigication 94V-0 Epitaxial construction High temperature soldering guaranteed: 260 /10s at terminals High reliability grade (AEC-Q101 qualified) Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Case: JEDEC SMA/DO-214AC Molded plastic Marking Diagram Terminal: Pure tin plated, lead free = Specific Device Code SS1X Polarity: Indicated by cathode band G = Green Compound Packaging: 12 mm tape per EIA STD RS-481 Y = Year Weight: 0.066 gram M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% SS SS SS SS SS SS SS SS Symbol Unit Type Number 12 13 14 15 16 19 110 115 Maximum Repetitive Peak Reverse Voltage V 20 30 40 50 60 90 100 150 V RRM Maximum RMS Voltage V 14 21 28 35 42 63 70 105 V RMS Maximum DC Blocking Voltage V 20 30 40 50 60 90 100 150 V DC Maximum Average Forward Rectified Current I 1 A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine- I 30 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) 1 A 25 V 0.5 0.75 0.80 0.95 V F 0.4 0.65 0.70 0.85 1 A 100 0.4 0.1 mA Maximum Reverse Current Rated VR T =25 A T =100 I A R 10 5 - mA T =125 A -- 2 mA Typical Junction Capecitance (Note 2) C 50 pF j R 28 jL O Typical Thermal Resistance C/W R 88 jA O Operating Temperature Range T - 65 to + 125 - 65 to + 150 J C O Storage Temperature Range T - 65 to + 150 STG C Note1: Pulse Test with PW=300u sec, 1% Duty Cycle Note2: Measured at 1 MHz and Applied Reverse Voltagr of 4.0V D.C. Version:H11RATINGS AND CHARACTERISTIC CURVES (SS12 THRU SS115) FIG.1 FORWARD CURRENT DERATING CUURVE FIG. 2 MAXIMUM NON-REPETITIVE FORWARD 1.2 SURGE CURRENT 40 1 8.3ms Single Half Sine-Wave 0.8 30 SS12-SS14 SS15-SS115 0.6 20 0.4 10 0.2 RESISTIVE OR INDUCTIVE LOAD 0 0 50 60 70 80 90 100 110 120 130 140 150 160 170 1 10 100 o NUMBER OF CYCLES AT 60 Hz LEAD TEMPERATURE ( C) FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISTICS 100 SS12-SS14 100 SS15-SS115 TA=125 10 10 SS15-SS16 1 1 SS12-SS14 SS115 0.1 TA=75 0.1 0.01 SS19-SS110 TA=25 0.01 0.001 0 0.5 1 1.5 0 20 40 60 80 100 120 140 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE.(%) FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE FIG. 5 TYPICAL JUNCTION CAPACITANCE 100 1000 SS12-SS14 SS15-SS16 SS19-SS115 10 100 TA=25 1 f=1.0MHz Vslg=50mVp-p 10 0.1 0.1 1 10 100 0.01 0.1 1 10 100 REVERSE VOLTAGE (V) T-PULSE DURATION(s) Version:H11 INSTANTANEOUS FORWARD CURRENT AVERAGE FORWARD CURRENT CAPACITANCE (pF) (A) (A) TRANSIENT THERMAL PEAK FORWARD SURGE IMPEDANCE ( /W) CURRENT (A) INSTANTANEOUS REVERSE CURRENT (mA)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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