X-On Electronics has gained recognition as a prominent supplier of SS210 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. SS210 Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

SS210 Taiwan Semiconductor

SS210 electronic component of Taiwan Semiconductor
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See Product Specifications
Part No.SS210
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Taiwan Semiconductor Schottky Diodes & Rectifiers 2A,100V,SMD SCHOTTKY Rect
Datasheet: SS210 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3718 ea
Line Total: USD 0.37 
Availability - 9099
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
9099
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3718
10 : USD 0.2673
100 : USD 0.121
1000 : USD 0.0968
3000 : USD 0.0715
9000 : USD 0.0682

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
trr - Reverse Recovery time
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Brand
Factory Pack Quantity :
Vr - Reverse Voltage
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the SS210 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SS210 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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creat by art SS22 - SS215 2.0 AMPS. Surface Mount Schottky Barrier Rectifiers SMB/DO-214AA RoRoHSHS Pb COCOMMPPLLIIANCANCEE Features For surface mounted application Easy pirk and place Metal to silicon rectifier, majority carrier conduction Low power loss, high efficiency High current capability, low VF High surge current capability Plastic material used carriers Underwriters Laboratory Classigication 94V-0 Epitaxial construction High temperature soldering: 260/10 seconds at terminals Green compound with suffix on packing code & prefix on datecode. Dimensions in inches and (millimeters) Mechanical Data Case: Molded plastic Marking Diagram Terminals: Pure tin plated, lead free. SS2X = Specific Device Code Polarity: Indicated by cathode band G = Green Compound Packaging: 12mm tape per EIA STD RS-481 Y = Year Weight: 0.093 grams M = Work Month Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% SS SS SS SS SS SS SS SS Symbol Units Type Number 22 23 24 25 26 29 210 215 Maximum Recurrent Peak Reverse Voltage V 20 30 40 50 60 90 100 150 V RRM Maximum RMS Voltage V 14 21 28 35 42 63 70 105 V RMS Maximum DC Blocking Voltage V 20 30 40 50 60 90 100 150 V DC Maximum Average Forward Rectified Current I 2 A F(AV) at T (See Fig. 1) L Peak Forward Surge Current, 8.3 ms Single Half Sine- I 50 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) 0.5 0.70 0.85 0.95 V IF= 2 A 25 V F 0.4 0.65 0.70 0.80 100 Maximum DC Reverse T =25 0.4 0.1 mA A Current at Rated DC T =100 I 10 5 - R mA A Blocking Voltage T =125 A - 5.0 mA Typical Junction Capecitance (Note 2) C 130 pF j R 17 JL O Typical Thermal Resistance C/W R 75 JA O Operating Temperature Range T - 65 to + 125 - 65 to + 150 C J O Storage Temperature Range T - 65 to + 150 STG C Note 1: Pulse Test with PW=300u sec, 1% Duty Cycle Note 2: Measure at 1MHz and Applied Reverse Voltage of 4.0V D.C. Version:E11RATINGS AND CHARACTERISTIC CURVES (SS22 THRU SS215) FIG.1- MAXIMUM FORWARD CURRENT DERATING FIG. 2- MAXIMUM NON-REPETITIVE FORWARD CURVE SURGE CURRENT 2.5 50 8.3ms Single Half Sine 2.0 Wave JEDEC Method 40 AT RATED TL SS22-SS24 SS25-SS215 1.5 30 1.0 20 RESISTIVE OR 0.5 10 INDUCTIVE LOAD 0.0 0 50 60 70 80 90 100 110 120 130 140 150 160 1 10 100 o NUMBER OF CYCLES AT 60 Hz LEAD TEMPERATURE .( C) FIG. 4- TYPICALREVERSE CHARACTERISTICS FIG. 3- TYPICAL FORWARD CHARACTERISTICS 100 100 o SS22-SS24 TA=25 C SS25-SS215 TA=125 10 10 SS25-SS26 1 1 SS29-SS210 SS22- 0.1 TA=75 SS215 0.01 0.1 TA=25 PULSE WIDTH=300uS 1% DUTY CYCLE 0.001 0.01 0 20 40 60 80 100 120 140 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 PERCENT OF RATED PEAK REVERSE VOLYAGE(%) FORWARD VOLTAGE. (V) FIG. 6- TYPICAL TRANSIENT THERMAL FIG. 5- TYPICAL JUNCTION CAPACITANCE CHARCTERISTICS 100 1000 TA25 f=1.0MHz Vsig=50mVp-p 10 100 1 SS29-SS215 SS22-SS24 SS25-SS26 0.1 10 0.01 0.1 1 10 100 0.1 1 10 100 REVERSE VOLTAGE (V) T-PULSE DURATION. (sec) Version:E11 AVERAGE FORWARD a INSTANTANEOUS FORWARD A JUNCTION CAPACITANCE (pF) a CURRENT (A) CURRENT (A) INSTANTANEOUS REVERSE A CURRENT (mA) PEAK FORWARD SURGE TRANSIENT THERMAL A CURRENT (A) IMPEDANCE ( /W)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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