TPC816 SERIES Taiwan Semiconductor 200mW, 4 PIN DIP Phototransistor Photocoupler FEATURES KEY PARAMETERS Current transfer ratio PARAMETER VALUE UNIT (CTR: MIN.80% at IF=5mA, VCE=5V) CTR 80-600 % High isolation voltage between input and output V 70 V CEO (Viso=5000V rms) P 200 mW High collector-emitter voltage (VCEO:70V) tot Compliant to RoHS directive 2011/65/EU and I 50 mA C in accordance to WEEE 2002/96/EC V 5000 Vrms iso Halogen-free according to IEC 61249-2-21 DIP-4 Package DIP-4M SOP-4 APPLICATIONS Configuration Single Dice Programmable controllers System appliances, measuring instruments Signal transmission between circuits of different potentials and impedances MECHANICAL DATA Case: DIP-4 , DIP-4M , SOP-4 Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band 1 Version:B1612 TPC816 SERIES Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL PART NUMBER UNIT Forward current I 50 F mA Peak forward current (Note 1) I 1 A FM Input Reverse voltage V 6 V R Power dissipation P 70 mW Collector-emitter voltage V 70 CEO V Emitter-collector voltage V 6 V ECO Output Collector current I 50 C mA Collector power dissipation P 150 mW C Total power dissipation P 200 mW tot Isolation voltage (Note 2) V 5000 Vrms iso Operating temperature T -30 to +100 C opr Storage temperature T -55 to +125 stg C Soldering temperature (Note 3) T 260 sol C Notes: 1. Pulse width 100ms Duty ratio 0.001 2. 40 to 60% RH AC for 1 minute 3. For 10s ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Forward voltage V 1.2 1.4 V I =20mA F F Peak forward voltage V 3.0 V I =0.5A FM FM Input Reverse current I 10 A V =4V R R Terminal capacitance C 30 250 pF V=0, f=1kHz t -7 Collector dark current I 10 A Output V =20V,I =0 CEO CE F Current transfer ration 80 600 % I =5mA, V =5V CTR F CE (Note 1) Collector-emitter 0.1 0.2 V I =20mA, I =1mA V F C CE(sat) saturation voltage DC500V, 10 11 5x10 10 Isolation resistance R ISO 40 to 60%RH Transfer V=0, f=1MHz 0.6 1.0 pF Characteristics Floating capacitance C f V =5V, I =2mA, CE C 80 KHz Cut-off frequency f c R =100, -3dB L t 4 18 s Rise time r Response V =2V, I =2mA, CE C time R =100 L t 3 18 s Fall time f Notes: 1. Classification table of current transfer ratio is shown below 2 Version:B1612