TPC817 SERIES Taiwan Semiconductor 200mW, 4 PIN DIP Phototransistor Photocoupler FEATURES KEY PARAMETERS Current transfer ratio PARAMETER VALUE UNIT (CTR: MIN.80% at IF=5mA, VCE=5V) CTR 80-600 % High isolation voltage between input and output V 80 V CEO (Viso=5000V rms) P 200 mW Creepage distance 7.62mm tot UL Recognized File E478892 I 50 mA C Compliant to RoHS directive 2011/65/EU and V 5000 Vrms iso in accordance to WEEE 2002/96/EC DIP-4 Halogen-free according to IEC 61249-2-21 Package DIP-4M SOP-4 Configuration Single Dice APPLICATIONS Programmable controllers System appliances, measuring instruments Telecommunication equipments Home appliances,such as fan heaters,etc Signal transmission between circuits of different potentials and impedances MECHANICAL DATA Case: DIP-4 , DIP-4M , SOP-4 Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band 1 Version:C1612 TPC817 SERIES Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL PART NUMBER UNIT Forward current I 50 F mA Input Reverse voltage V 6 V R Power dissipation P 70 mW Collector-emitter voltage V 80 V CEO Emitter-collector voltage V 6 ECO V Output Collector current I 50 mA C Collector power dissipation P 150 C mW Total power dissipation P 200 mW tot Isolation voltage V 5000 Vrms iso Rated impulse isolation voltage V 6000 V IOTM Rated repetitive peak isolation voltage V 630 V IORM Operating temperature T -40 to +100 opr C Storage temperature T -55 to +125 stg C Soldering temperature T 260 C sol ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Forward voltage V 1.2 1.4 V I =20mA F F Reverse current I 10 A Input V =4V R R Terminal capacitance C 30 250 pF V=0, f=1kHz t -7 Collector dark current I 10 A V =20V,I =0 CEO CE F Collector-emitter BV 80 V I =0.1mA, I =0 CEO C F Output breakdown voltage Emitter-collector BV 6 V I =10A, I =0 ECO E F breakdown voltage Collector current 2.5 30 mA IC I =5mA, V =5V Current transfer F CE 80 600 % CTR ration(Note 1) Collector-emitter 0.1 0.2 V I =20mA, I =1mA V F C CE(sat) saturation voltage DC500V, 10 11 Transfer 5x10 10 Isolation resistance R ISO 40 to 60%RH Characteristics V=0, f=1MHz 0.6 1.0 pF Floating capacitance C f V =5V, I =2mA, CE C 80 KHz Cut-off frequency f c R =100, -3dB L t 4 18 s Rise time r Response V =2V, I =2mA, CE C time R =100 L t 3 18 s Fall time f Notes: 1. Classification table of current transfer ratio is shown below 2 Version:C1612