TPMR10G S1G Taiwan Semiconductor

TPMR10D - TPMR10J Taiwan Semiconductor CREAT BY ART 10A, 200V - 600V High Current Density Switchmode Ultrafast Surface Mount Rectifiers FEATURES - Very low profile, typical height of 1.1mm o - 175 C operating junction temperature - Glass passivated chip junction - Low conduction loss - Low leakage current - High forward surge capability TO-277A (SMPC) - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TYPICAL APPLICATIONS The devices were designed with a priority on V to minimize the conduction F losses as secondary rectification of SMPS, while the diodes remain fast enough to fit applications where the switching frequency is counted in tens of kilohertz. The miniature high power density surface mount packages is perfect for space constraint design. MECHANICAL DATA Case: TO-277A (SMPC) Molding compound, UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band Weight: 0.095 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER SYMBOL TPMR10D TPMR10G TPMR10J UNIT Marking code MR10D MR10G MR10J Maximum repetitive peak reverse voltage V 200 400 600 V RRM Maximum average forward rectified current I 10 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 150 A FSM superimposed on rated load (1) T =25C 0.95 1.20 1.80 J Maximum instantaneous forward voltage V V F 10 A T =125C 0.86 1.00 - J o 5 10 Maximum reverse current rated V T =25 C R J I A R o 250 500 T =125 C J I =1A, di/dt=-50A/s, V =30V 60 - Maximum reverse F R t ns rr recovery time I =0.5A, I =1A, I =0.25A 35 40 F R RR (2) 8.4 R JL Typical thermal resistance C/W (3) 78 R JA (4) C 140 Typical junction capacitance pF J Operating junction temperature range T - 55 to +175 C J Storage temperature range T - 55 to +175 C STG Note 1: Pulse test with PW=300 s, 1% duty cycle Note 2: Mounted on FR4 PCB with 16mm x 16mm Cu pad area Note 3: Free air, mounted on recommned pad Note 4: Measured at 1 MHz and Applied V =4.0 Volts R Document Number: DS D1501002 Version: A15TPMR10D - TPMR10J Taiwan Semiconductor ORDER INFORMATION (EXAMPLE) TPMR10DS1G Greencompoundcode Packingcode Partno. RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG.1 MAXIMUM FORWARD CURRENT FIG. 2 TYPICAL INSTANTANEOUS FORWARD DERATING CURVE CHARACTERISTICS 12 100 Pulse Width=300s 1% Duty Cycle 10 200V 400V 600V 8 10 6 T =125C J 4 1 RESISTER OR INDUCTIVE LOAD T =25C J 2 0 0. 1 0 25 50 75 100 125 150 175 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 2 LEAD TEMPERATURE (C) FORWARD VOLTAGE (V) FIG. 3 MAXIMUM NON-REPETITIVE FORWARD PEAK FIG. 4 TYPICAL REVERSE CHARACTERISTICS SURGE CURRENT 200 100 175 8.3ms Single Half Sine Wave T =125C J 150 10 125 100 1 75 50 0. 1 25 T =25C J 0 0. 01 1 10 100 0 20 406080 100 NUMBER OF CYCLES AT 60 Hz PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1501002 Version: A15 AVERAGE FORWARD CURRENT (A) PEAK FORWARD SURGE CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) INSTANTANEOUS REVERSE CURRENT (A)