X-On Electronics has gained recognition as a prominent supplier of TPC817S1C RAG Transistor Output Optocouplers across the USA, India, Europe, Australia, and various other global locations. TPC817S1C RAG Transistor Output Optocouplers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Transistor Output Optocouplers, ensuring timely deliveries around the world.

TPC817S1C RAG Taiwan Semiconductor

TPC817S1C RAG electronic component of Taiwan Semiconductor
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Part No.TPC817S1C RAG
Manufacturer: Taiwan Semiconductor
Category: Transistor Output Optocouplers
Description: Transistor Output Optocouplers VCEO=80V, IF=50m, CTR:200~400% DC Input Phototransistor
Datasheet: TPC817S1C RAG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 2000
Multiples : 2000
2000 : USD 0.1878
N/A

Obsolete
0
MOQ : 2000
Multiples : 2000
2000 : USD 0.059
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.0379
10 : USD 0.7395
100 : USD 0.1243
1000 : USD 0.1023
2000 : USD 0.0852
10000 : USD 0.0772
24000 : USD 0.0732
50000 : USD 0.0712
100000 : USD 0.0682
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Rise Time
Current Transfer Ratio
Fall Time
Output Type
Package / Case
Number of Channels
If - Forward Current
Maximum Collector Current
Maximum Collector Emitter Voltage
Isolation Voltage
Maximum Collector Emitter Saturation Voltage
Vf - Forward Voltage
Vr - Reverse Voltage
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Mounting Style
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the TPC817S1C RAG from our Transistor Output Optocouplers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the TPC817S1C RAG and other electronic components in the Transistor Output Optocouplers category and beyond.

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TPC817 SERIES Taiwan Semiconductor 200mW, 4 PIN DIP Phototransistor Photocoupler FEATURES KEY PARAMETERS Current transfer ratio PARAMETER VALUE UNIT (CTR: MIN.80% at IF=5mA, VCE=5V) CTR 80-600 % High isolation voltage between input and output V 80 V CEO (Viso=5000V rms) P 200 mW Creepage distance 7.62mm tot UL Recognized File E478892 I 50 mA C Compliant to RoHS directive 2011/65/EU and V 5000 Vrms iso in accordance to WEEE 2002/96/EC DIP-4 Halogen-free according to IEC 61249-2-21 Package DIP-4M SOP-4 Configuration Single Dice APPLICATIONS Programmable controllers System appliances, measuring instruments Telecommunication equipments Home appliances,such as fan heaters,etc Signal transmission between circuits of different potentials and impedances MECHANICAL DATA Case: DIP-4 , DIP-4M , SOP-4 Molding compound: UL flammability classification rating 94V-0 Moisture sensitivity level: level 1, per J-STD-020 Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Polarity: Indicated by cathode band 1 Version:C1612 TPC817 SERIES Taiwan Semiconductor ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL PART NUMBER UNIT Forward current I 50 F mA Input Reverse voltage V 6 V R Power dissipation P 70 mW Collector-emitter voltage V 80 V CEO Emitter-collector voltage V 6 ECO V Output Collector current I 50 mA C Collector power dissipation P 150 C mW Total power dissipation P 200 mW tot Isolation voltage V 5000 Vrms iso Rated impulse isolation voltage V 6000 V IOTM Rated repetitive peak isolation voltage V 630 V IORM Operating temperature T -40 to +100 opr C Storage temperature T -55 to +125 stg C Soldering temperature T 260 C sol ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN TYP MAX UNIT Forward voltage V 1.2 1.4 V I =20mA F F Reverse current I 10 A Input V =4V R R Terminal capacitance C 30 250 pF V=0, f=1kHz t -7 Collector dark current I 10 A V =20V,I =0 CEO CE F Collector-emitter BV 80 V I =0.1mA, I =0 CEO C F Output breakdown voltage Emitter-collector BV 6 V I =10A, I =0 ECO E F breakdown voltage Collector current 2.5 30 mA IC I =5mA, V =5V Current transfer F CE 80 600 % CTR ration(Note 1) Collector-emitter 0.1 0.2 V I =20mA, I =1mA V F C CE(sat) saturation voltage DC500V, 10 11 Transfer 5x10 10 Isolation resistance R ISO 40 to 60%RH Characteristics V=0, f=1MHz 0.6 1.0 pF Floating capacitance C f V =5V, I =2mA, CE C 80 KHz Cut-off frequency f c R =100, -3dB L t 4 18 s Rise time r Response V =2V, I =2mA, CE C time R =100 L t 3 18 s Fall time f Notes: 1. Classification table of current transfer ratio is shown below 2 Version:C1612

Tariff Desc

8541.50.00 - Other semiconductor devices (not IC) semiconductor devices
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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