X-On Electronics has gained recognition as a prominent supplier of US1B R3 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. US1B R3 Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

US1B R3 Taiwan Semiconductor

US1B R3 electronic component of Taiwan Semiconductor
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Part No.US1B R3
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Diode Switching 100V 1A 2-Pin SMA T/R
Datasheet: US1B R3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1800: USD 0.0863 ea
Line Total: USD 155.34 
Availability - 0
MOQ: 1800  Multiples: 1800
Pack Size: 1800
Availability Price Quantity
0
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1800
Multiples : 1800
1800 : USD 0.0863

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Configuration
Vf - Forward Voltage
Packaging
Brand
Operating Temp Range
Package Type
Pin Count
Operating Temperature Classification
Rad Hardened
Rectifier Type
Peak Non-Repetitive Surge Current
Peak Rep Rev Volt
Rev Curr
Rev Recov Time
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We are delighted to provide the US1B R3 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the US1B R3 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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creat by ART US1A - US1M 1.0AMP. High Efficient Surface Mount Rectifiers SMA/DO-214AC RoRoHHSS Pb COCOMMPPLIALIANCENCE Features Glass passivated chip junction For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Ultrafast recovery time for high efficiency Low forward voltage, low power loss High temperature soldering guaranteed: 260 /10 seconds on terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Case: Molded plastic Marking Diagram US1X = Specific Device Code Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 G = Green Compound Polarity: Indicated by cathode band Y = Year Weight: 0.064 grams WW = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol US1A US1B US1D US1G US1J US1K US1M Unit Type Number Maximum Repetitive Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 1A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine- I 30 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.0 1.7 V F 1 A 5 Maximum Reverse Current Rated VR T =25 A I uA R T =125 150 A Maximum Reverse Recovery Time (Note 2) Trr 50 75 nS Typical Junction Capacitance (Note 3) Cj 15 10 pF R jA 75 O Typical Thermal Resistance C/W R 27 jL O T Operating Temperature Range - 55 to + 150 J C O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:G11RATINGS AND CHARACTERISTIC CURVES (US1A THRU US1M) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE FIG.1 MAXIMUM FORWARD CURRENT DERATING CURRENT CURVE 50 1.5 8.3mS Single Half Sine Wave JEDEC Method RESISTIVE OR 40 INDUCTIVE 1 30 20 0.5 10 0 0 0 25 50 75 100 125 150 175 1 10 100 o NUMBER OF CYCLES AT 60 Hz LEAD TEMPERATURE ( C) FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISRICS 100 10 US1A-US1G TA=100 10 1 1 0.1 US1J-US1M TA=25 0.01 0.1 PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.001 0 2040 6080 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE FIG. 5 TYPICAL JUNCTION CAPACITANCE 100 100 TA=25 US1A-US1G f=1.0MHz Vsig=50mVp-p 10 10 US1J-US1M 1 1 0.1 0.01 0.1 1 10 100 0.1 1 10 100 T-PULSE DURATION(s) REVERSE VOLTAGE (V) Version:G11 AVERAGE FORWARD INSTANTANEOUS FORWARD CURRENT CAPACITANCE (pF) CURRENT (A) (A) PEAK FORWARD SURGE A TRANSIENT THERMAL IMPEDANCE A INSTANTANEOUS REVERSE CURRENT (uA) CURRENT (A) ( /W)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)
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