US1B R3 Taiwan Semiconductor

creat by ART US1A - US1M 1.0AMP. High Efficient Surface Mount Rectifiers SMA/DO-214AC RoRoHHSS Pb COCOMMPPLIALIANCENCE Features Glass passivated chip junction For surface mounted application Low profile package Built-in strain relief Ideal for automated placement Easy pick and place Ultrafast recovery time for high efficiency Low forward voltage, low power loss High temperature soldering guaranteed: 260 /10 seconds on terminals Plastic material used carries Underwriters Laboratory Classification 94V-0 Green compound with suffix on packing code & prefix on datecode Dimensions in inches and (millimeters) Mechanical Data Case: Molded plastic Marking Diagram US1X = Specific Device Code Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 G = Green Compound Polarity: Indicated by cathode band Y = Year Weight: 0.064 grams WW = Work Week Maximum Ratings and Electrical Characteristics Rating at 25 ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Symbol US1A US1B US1D US1G US1J US1K US1M Unit Type Number Maximum Repetitive Peak Reverse Voltage V 50 100 200 400 600 800 1000 V RRM Maximum RMS Voltage V 35 70 140 280 420 560 700 V RMS Maximum DC Blocking Voltage V 50 100 200 400 600 800 1000 V DC Maximum Average Forward Rectified Current I 1A F(AV) Peak Forward Surge Current, 8.3 ms Single Half Sine- I 30 A FSM wave Superimposed on Rated Load (JEDEC method) Maximum Instantaneous Forward Voltage (Note 1) V 1.0 1.7 V F 1 A 5 Maximum Reverse Current Rated VR T =25 A I uA R T =125 150 A Maximum Reverse Recovery Time (Note 2) Trr 50 75 nS Typical Junction Capacitance (Note 3) Cj 15 10 pF R jA 75 O Typical Thermal Resistance C/W R 27 jL O T Operating Temperature Range - 55 to + 150 J C O Storage Temperature Range T - 55 to + 150 STG C Note 1: Pulse Test with PW=300 usec, 1% Duty Cycle Note 2: Reverse Recovery Test Conditions: IF=0.5A, IR=1.0A, IRR=0.25A Note 3: Measured at 1 MHz and Applied Reverse Voltage of 4.0V D.C. Version:G11RATINGS AND CHARACTERISTIC CURVES (US1A THRU US1M) FIG. 2 MAXIMUM NON-REPETITIVE FORWARD SURGE FIG.1 MAXIMUM FORWARD CURRENT DERATING CURRENT CURVE 50 1.5 8.3mS Single Half Sine Wave JEDEC Method RESISTIVE OR 40 INDUCTIVE 1 30 20 0.5 10 0 0 0 25 50 75 100 125 150 175 1 10 100 o NUMBER OF CYCLES AT 60 Hz LEAD TEMPERATURE ( C) FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 TYPICAL FORWARD CHARACTERISRICS 100 10 US1A-US1G TA=100 10 1 1 0.1 US1J-US1M TA=25 0.01 0.1 PULSE WIDTH=300uS 1% DUTY CYCLE 0.01 0.001 0 2040 6080 100 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE FIG. 5 TYPICAL JUNCTION CAPACITANCE 100 100 TA=25 US1A-US1G f=1.0MHz Vsig=50mVp-p 10 10 US1J-US1M 1 1 0.1 0.01 0.1 1 10 100 0.1 1 10 100 T-PULSE DURATION(s) REVERSE VOLTAGE (V) Version:G11 AVERAGE FORWARD INSTANTANEOUS FORWARD CURRENT CAPACITANCE (pF) CURRENT (A) (A) PEAK FORWARD SURGE A TRANSIENT THERMAL IMPEDANCE A INSTANTANEOUS REVERSE CURRENT (uA) CURRENT (A) ( /W)