X-On Electronics has gained recognition as a prominent supplier of ES1J R3 Schottky Diodes & Rectifiers across the USA, India, Europe, Australia, and various other global locations. ES1J R3 Schottky Diodes & Rectifiers are a product manufactured by Taiwan Semiconductor. We provide cost-effective solutions for Schottky Diodes & Rectifiers, ensuring timely deliveries around the world.

ES1J R3 Taiwan Semiconductor

ES1J R3 electronic component of Taiwan Semiconductor
Images are for reference only
See Product Specifications
Part No.ES1J R3
Manufacturer: Taiwan Semiconductor
Category: Schottky Diodes & Rectifiers
Description: Diode Switching 600V 1A 2-Pin SMA T/R
Datasheet: ES1J R3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1800: USD 0.0944 ea
Line Total: USD 169.92

Availability - 0
MOQ: 1800  Multiples: 1800
Pack Size: 1800
Availability Price Quantity
0
Ship by Fri. 02 Aug to Thu. 08 Aug
MOQ : 1800
Multiples : 1800
1800 : USD 0.0944

   
Manufacturer
Product Category
Mounting Style
Configuration
Vf - Forward Voltage
Packaging
Operating Temp Range
Package Type
Pin Count
Operating Temperature Classification
Rad Hardened
Rectifier Type
Peak Non-Repetitive Surge Current
Peak Rep Rev Volt
Rev Curr
Rev Recov Time
Avg Forward Curr Max
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We are delighted to provide the ES1J R3 from our Schottky Diodes & Rectifiers category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the ES1J R3 and other electronic components in the Schottky Diodes & Rectifiers category and beyond.

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ES1A thru ES1J Taiwan Semiconductor CREAT BY ART Surface Mount Super Fast Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Super fast recovery time for high efficiency - Built-in strain rellef - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: DO-214AC (SMA) DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - Green compound (halogen-free) Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (T =25 unless otherwise noted) A ES ES ES ES ES ES ES ES PARAMETER SYMBOL UNIT 1A 1B 1C 1D 1F 1G 1H 1J Maximum repetitive peak reverse voltage V 50 100 150 200 300 400 500 600 V RRM Maximum RMS voltage V 35 70 105 140 210 280 350 420 V RMS Maximum DC blocking voltage V 50 100 150 200 300 400 500 600 V DC Maximum average forward rectified current I 1 A F(AV) Peak forward surge current, 8.3 ms single half sine-wave I 30 A FSM superimposed on rated load Maximum instantaneous forward voltage (Note 1) V 0.95 1.3 1.7 V F 1 A 5 Maximum reverse current rated VR T =25 J I A R T =100 100 J Maximum reverse recovery time (Note 2) 35 Trr ns Typical junction capacitance (Note 3) Cj 16 18 pF R 35 JL O Typical thermal resistance C/W R 85 JA O Operating junction temperature range T - 55 to +150 C J O Storage temperature range T - 55 to +150 STG C Note 1: Pulse test with PW=300s, 1% duty cycle Note 2: Reverse Recovery Test Conditions: I =0.5A, I =1.0A, I =0.25A F R RR Note 3: Measured at 1 MHz and Applied V =4.0 Volts R Document Number: DS D1405052 Version:J14ES1A thru ES1J Taiwan Semiconductor ORDERING INFORMATION PART NO. AEC-Q101 PACKING GREEN COMPOUND PACKAGE PACKING QUALIFIED CODE CODE R3 SMA 1,800 / 7 Plastic reel R2 SMA 7,500 / 13 Paper reel M2 SMA 7,500 / 13 Plastic reel Prefix F3 Folded SMA 1,800 / 7 Plastic reel ES1x Suffix (Note 1) F2 Folded SMA 7,500 / 13 Paper reel F4 Folded SMA 7,500 / 13 Plastic reel E3 Clip SMA 1,800 / 7 Plastic reel N/A E2 Clip SMA 7,500 / 13 Plastic reel Note 1: defines voltage from 50V (ES1A) to 600V (ES1J) EXAMPLE AEC-Q101 GREEN COMPOUND PREFERRED P/N PART NO. PACKING CODE DESCRIPTION QUALIFIED CODE ES1J R3 ES1J R3 ES1J R3G R3 G Green compound ES1J ES1JHR3 H R3 AEC-Q101 qualified ES1J RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 2 TYPICAL INSTANTANEOUS FORWARD FIG.1 MAXIMUM FORWARD CURRENT CHARACTERISTICS DERATING CURVE 100 Pulse Width=300s 1. 2 1% Duty Cycle 1 ES1F-1G 10 ES1A-D 0. 8 0. 6 0. 4 1 RESISTER OR 0. 2 INDUCTIVE LOAD 0 ES1H-1J 80 90 100 110 120 130 140 150 0. 1 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 1. 8 o LEAD TEMPERATURE ( C) FORWARD VOLTAGE (V) FIG. 4 TYPICAL REVERSE CHARACTERISTICS FIG. 3 MAXIMUM NON-REPETITIVE FORWARD PEAK 1000 SURGE CURRENT 30 TJ=125 8.3mS Single Half Sine Wave 100 25 (JEDEC Method) 20 10 TJ=75 15 1 10 TJ=25 5 0. 1 0 1 10 100 0. 01 NUMBER OF CYCLES AT 60 Hz 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Document Number: DS D1405052 Version:J14 PEAK FORWARD SURGE CURRENT AVERAGE FORWARD A (A) CURRENT (A) INSTANTANEOUS REVERSE CURRENT INSTANTANEOUS FORWARD CURRENT (A) (A)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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