eGaN FET DATASHEET EPC2018 EPC2018 Enhancement Mode Power Transistor NEW PRODUCT V , 150 V DSS EFFICIENT POWER CONVERSION R , 25 mW DS(ON) I , 12 A HAL D Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag- ing the infrastructure that has been developed over the last 55 years. GaNs exceptionally high elec- tron mobility and low temperature coefficient allows very low R , while its lateral device structure DS(ON) and majority carrier diode provide exceptionally low Q and zero Q . The end result is a device that G RR can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. EPC2018 eGaN FETs are supplied only in passivated die form with solder bars Maximum Ratings Applications V Drain-to-Source Voltage 150 V DS High S peed DC-DC conversion Class D Audio Continuous (T =25C, = 17)12 A JA Hard Switched and High Frequenc y Circ uits I A D Pulsed (25C, Tpulse = 300 s) 60 Benefits Gate-to-Source Voltage6 Ultra High Efficienc y V V GS Gate-to-Source Voltage-5 Ultra Low R DS(on) Ultra low Q G T Operating Temperature -40 to 125 J C Ultra small footprint T Storage Temperature -40 to 150 STG PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics (T = 25C unless otherwise stated) J BV Drain-to-Source Voltage V = 0 V, I = 200 A 150 V DSS GS D I Drain Source Leakage V = 120 V, V = 0 V 50 150 A DSS DS GS Gate-Source Forward Leakage V = 5 V 1 3 GS I mA GSS Gate-Source Reverse Leakage V = -5 V 0.2 1 GS V Gate Threshold Voltage V = V , I = 3 mA 0.7 1.4 2.5 V GS(TH) DS GS D R Drain-Source On Resistance V = 5 V, I = 6 A 18 25 m DS(ON) GS D Source-Drain Characteristics (T = 25C unless otherwise stated) J I = 0.5 A, V = 0 V, T = 25C 1.8 S GS V Source-Drain Forward Voltage V SD I = 0.5 A, V = 0 V, T = 125C 1.8 S GS All measurements were done with substrate shorted to source. PARAMETER Thermal CharacteristicsTEST CONDITIONS MIN TYP MAX UNIT TYP = 25C unless otherwise stated) Dynamic Characteristics (T J R Thermal Resistance, Junction to Case 2.4 C/W JC C Input Capacitance 480 540 ISS R Thermal Resistance, Junction to Board 16 C/W JB C Output Capacitance V = 100 V, V = 0 V 270 350 pF OSS DS GS R Thermal Resistance, Junction to Ambient (Note 1) 56 C/W JA C Reverse Transfer Capacitance 9.2 12 RSS Note 1: R is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. JA Q Total Gate Charge (V = 5 V) 5 7.5 G GS See PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics (T = 25C unless otherwise stated) J BV Drain-to-Source Voltage V = 0 V, I = 200 A 150 V DSS GS D I Drain Source Leakage V = 120 V, V = 0 V 50 150 A DSS DS GS Gate-Source Forward Leakage V = 5 V 1 3 GS I mA GSS Gate-Source Reverse Leakage V = -5 V 0.2 1 GS V Gate Threshold Voltage V = V , I = 3 mA 0.7 1.4 2.5 V GS(TH) DS GS D R Drain-Source On Resistance V = 5 V, I = 6 A 18 25 m DS(ON) GS D Source-Drain Characteristics (T = 25C unless otherwise stated) J I = 0.5 A, V = 0 V, T = 25C 1.8 S GS V Source-Drain Forward Voltage V SD eGaN FET DATASHEET EPC2018 1.8 I = 0.5 A, V = 0 V, T = 125C S GS All measurements were done with substrate shorted to source. PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Dynamic Characteristics (T = 25C unless otherwise stated) J C Input Capacitance 480 540 ISS C Output Capacitance V = 100 V, V = 0 V 270 350 pF OSS DS GS C Reverse Transfer Capacitance 9.2 12 RSS Q Total Gate Charge (V = 5 V) 5 7.5 G GS Q Gate to Drain Charge 1.7 2.6 V = 100 V, I = 12 A GD DS D Q Gate to Source Charge 1.3 2 nC GS Q Output Charge V = 100 V, V = 0 V 40 50 DS GS OSS Q Source-Drain Recovery Charge 0 RR All measurements were done with substrate shorted to source. Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics 60 V = 5 GS 25C V = 4 GS 50 125C V = 3 GS V = 3 V DS V = 2 GS 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 0.5 1 1.5 2 2.5 3 3.5 4 4.5 V Drain to Source Voltage (V) V Gate to Source Voltage (V) DS GS Figure 3: R vs V for Various Current Figure 4: R vs V for Various Temperature DS(ON) G DS(ON) G 60 60 25C 125C 50 50 40 40 30 30 20 20 I = 10 A D I = 20 A D 10 10 I = 40 A D ID = 60 A 0 0 232.5 3.5 4 4.5 5 5.5 232.5 3.5 4 4.5 5 5.5 V Gate to Source Voltage (V) V Gate to Source Voltage (V) GS GS EPC EFFICIENT POWER CONVERSION CORPORATION WWW.EPC-CO.COM COPYRIGHT 2013 PAGE 2 60 50 40 30 20 10 0 I Drain Current (A) D R Drain to Source Resistance (m) DS(ON) I Drain Current (A) R Drain to Source Resistance (m) D DS(ON)