EPC2019 TDK

eGaN FET DATASHEET EPC2019 EPC2019 Enhancement Mode Power Transistor D V , 200 V DS EFFICIENT POWER CONVERSION G R , 50 mW DS(on) I , 8.5 A HAL D S Gallium Nitrides exceptionally high electron mobility and low temperature coefficient allows very low R , while its lateral device structure and majority carrier diode provide exceptionally low Q DS(on) G and zero Q . The end result is a device that can handle tasks where very high switching frequency, RR and low on-time are beneficial as well as those where on-state losses dominate. EPC2019 eGaN FETs are supplied only in Maximum Ratings passivated die form with solder bars PARAMETER VALUE UNIT Applications V Drain-to-Source Voltage (Continuous) 200 V DS High Speed DC-DC conversion Continuous (T = 25C, R = 18C/W) 8.5 A JA I A Class-D Audio D Pulsed (25C, T = 300 s) 42 PULSE High Frequency Hard-Switching and Gate-to-Source Voltage 6 Soft-Switching Circuits V V GS Gate-to-Source Voltage -4 T Operating Temperature -40 to 150 J Benefits C T Storage Temperature -40 to 150 STG Ultra High Efficiency Ultra Low R DS(on) Ultra Low Q G Thermal Characteristics Ultra Small Footprint PARAMETER TYP UNIT R Thermal Resistance, Junction-to-Case 2.7 JC R Thermal Resistance, Junction-to-Board 7.5 C/W JB R Thermal Resistance, Junction-to-Ambient (Note 1) 72 JA Note 1: R is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. JA See eGaN FET DATASHEET EPC2019 Dynamic Characteristics (T = 25C unless otherwise stated) J PARAMETER TEST CONDITIONS MIN TYP MAX UNIT C Input Capacitance 200 270 ISS C Output Capacitance V = 100 V, V = 0 V 110 150 pF OSS GS DS C Reverse Transfer Capacitance 0.7 1 RSS R Gate Resistance 0.4 G Q Total Gate Charge V = 100 V, V = 5 V, I = 7 A 1.8 2.5 G DS GS D Q Gate-to-Source Charge 0.6 GS Q Gate-to-Drain Charge V = 100 V, I = 7 A 0.35 0.6 GD DS D nC Q Gate Charge at Threshold 0.4 G(TH) Q Output Charge V = 100 V, V = 0 V 18 23 OSS DS DS Q Source-Drain Recovery Charge 0 RR All measurements were done with substrate connected to source. Figure 1: Typical Output Characteristics at 25C Figure 2: Transfer Characteristics 25C 125C V = 6 V DS V = 5 V GS V = 4 V GS V = 3 V GS V = 2 V GS 0 1 2 3 4 5 6 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Figure 3: R vs. V for Various Drain Currents Figure 4: R vs. V for Various Temperatures DS(on) GS DS(on) GS 25C 125C I = 4 A D I = 8 A D I = 7 A D I = 12 A D I = 24 A D 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V Gate-to-Source Voltage (V) V Gate-to-Source Voltage (V) GS GS EPC THE LEADER IN GaN TECHNOLOGY WWW.EPC-CO.COM COPYRIGHT 2019 2 40 40 35 35 30 30 25 25 20 20 15 15 10 10 5 5 0 0 120 120 100 100 80 80 60 60 40 40 20 20 0 0 I Drain Current (A) R Drain-to-Source Resistance (m) D DS(on) I Drain Current (A) R Drain-to-Source Resistance (m) DS(on) D