eGaN FET DATASHEET EPC2012C EPC2012C Enhancement Mode Power Transistor D V , 200 V DS EFFICIENT POWER CONVERSION G R , 100 m DS (on) I , 5 A HAL D S Gallium Nitrides exceptionally high electron mobility and low temperature coefficient allows very low R , while its lateral device structure and majority carrier diode provide exceptionally low Q DS(on) G and zero Q . The end result is a device that can handle tasks where very high switching frequency, RR and low on-time are beneficial as well as those where on-state losses dominate. EPC2012C eGaN FETs are supplied only in Maximum Ratings passivated die form with solder bars PARAMETER VALUE UNIT Applications V Drain-to-Source Voltage (Continuous) 200 V DS High Frequency DC-DC Conversion Continuous (T = 25C, R = 26C/W) 5 A Class D Audio JA I A D Wireless Power Transfer Pulsed (25C, T = 300 s) 22 PULSE Gate-to-Source Voltage 6 Benefits V V GS Gate-to-Source Voltage -4 Ultra High Efficiency Ultra Low R T Operating Temperature -40 to 150 DS(on) J C Ultra Low Q G T Storage Temperature -40 to 150 STG Ultra Small Footprint Thermal Characteristics PARAMETER TYP UNIT R Thermal Resistance, Junction-to-Case 4.2 JC R Thermal Resistance, Junction-to-Board 12.5 C/W JB R Thermal Resistance, Junction-to-Ambient (Note 1) 85 JA Note 1: R is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. JA See eGaN FET DATASHEET EPC2012C Dynamic Characteristics (T = 25C unless otherwise stated) J PARAMETER TEST CONDITIONS MIN TYP MAX UNIT C Input Capacitance 100 140 ISS C Reverse Transfer Capacitance V = 100 V, V = 0 V 0.4 0.6 pF RSS DS GS C Output Capacitance 64 85 OSS R Gate Resistance 0.6 G Q Total Gate Charge V = 100 V, V = 5 V, I = 3 A 1 1.3 G DS GS D Q Gate-to-Source Charge 0.3 GS Q Gate-to-Drain Charge V = 100 V, I = 3 A 0.2 0.35 GD DS D nC Q Gate Charge at Threshold 0.2 G(TH) Q Output Charge V = 100 V, V = 0 V 10 13 OSS DS GS Q Source-Drain Recovery Charge 0 RR All measurements were done with substrate connected to source. Note 2: C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 50% BV . OSS(ER) OSS DS DSS Note 3: C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 50% BV . OSS(TR) OSS DS DSS Figure 1: Typical Output Characteristics at 25C Figure 2: Transfer Characteristics 25C 20 20 125C V = 6 V DS 15 15 10 10 VGS = 5 V V = 4 V GS 5 5 V = 3 V GS V = 2 V GS 0 0 0 1 2 3 4 5 6 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 V Drain-to-Source Voltage (V) DS V Gate-to-Source Voltage (V) GS Figure 3: R vs. V for Various Drain Currents Figure 4: R vs. V for Various Temperatures DS(on) GS DS(on) GS I = 3 A 25C D I = 6 A 125C D I = 10 A D ID = 3 A I = 15 A D 2 2.5 3 3.5 4 4.5 5 2 2.5 3 3.5 4 4.5 5 V Gate-to-Source Voltage (V) V Gate-to-Source Voltage (V) GS GS EPC THE LEADER IN GaN TECHNOLOGY WWW.EPC-CO.COM COPYRIGHT 2019 2 250 250 200 200 150 150 100 100 50 50 0 0 R Drain-to-Source Resistance (m) I Drain Current (A) DS(om) D I Drain Current (A) R Drain-to-Source Resistance (m) D DS(on )