eGaN FET DATASHEET EPC2001 EPC2001 Enhancement Mode Power Transistor NEW PRODUCT V , 100 V DSS EFFICIENT POWER CONVERSION R , 7 mW DS(ON) I , 25 A D HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leverag- ing the infrastructure that has been developed over the last 55 years. GaNs exceptionally high elec- tron mobility and low temperature coefficient allows very low R , while its lateral device structure DS(ON) and majority carrier diode provide exceptionally low Q and zero Q . The end result is a device that G RR can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. EPC2001 eGaN FETs are supplied only in passivated die form with solder bars Maximum Ratings Applications Drain-to-Source Voltage (Continuous) 100 V V DS High S peed DC-DC conversion Drain-to-Source Voltage (up to 10,000 5ms pulses at 125 C) 120 V Class D Audio Hard Switched and High Frequenc y Circ uits Continuous (T = 25C, = 13) 25 A JA I A D Pulsed (25C, Tpulse = 300 s) 100 Benefits Ultra High Efficienc y Gate-to-Source Voltage 6 V V GS Ultra Low R DS(on) Gate-to-Source Voltage -5 Ultra low Q G Ultra small footprint T Operating Temperature -40 to 125 J C T Storage Temperature -40 to 150 STG PARAMETER TEST CONDITIONS MINTYP MAX UNIT Static Characteristics (T = 25C unless otherwise stated) J BV Drain-to-Source VoltageV = 0 V, I = 300 A 100 V DSS GS D I Drain Source LeakageV = 80 V, V = 0 V 100 250 A DSS DS GS Gate-Source Forward LeakageV = 5 V1 5 GS I mA GSS Gate-Source Reverse LeakageV = -5 V 0.2 1 GS V Gate Threshold VoltageV = V , I = 5 mA 0.7 1.4 2.5 V GS(th) DS GS D R Drain-Source On ResistanceV = 5 V, I = 25 A 5.6 7m DS(ON) GS D Source-Drain Characteristics (T = 25C unless otherwise stated) J I = 0.5 A, V = 0 V, T = 25C 1.75 S GS V Source-Drain Forward Voltage V SD I = 0.5 A, V = 0 V, T = 125C 1.8 S GS All measurements were done with substrate shorted to source. Thermal Characteristics TYP R Thermal Resistance, Junction to Case 2.1 C/W JC R Thermal Resistance, Junction to Board 15 C/W JB R Thermal Resistance, Junction to Ambient (Note 1) 54 C/W JA Note 1: R is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. JA See eGaN FET DATASHEET EPC2001 PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Dynamic Characteristics (T = 25C unless otherwise stated) J C Input Capacitance 850 950 ISS C Output Capacitance V = 50 V, V = 0 V 450 525 pF OSS DS GS C Reverse Transfer Capacitance 20 30 RSS Q Total Gate Charge (V = 5 V) 8 10 G GS Q Gate to Drain Charge V = 50 V, I = 25 A 2.2 2.7 GD DS D Q Gate to Source Charge 2.3 2.8 nC GS Q Output Charge V = 50 V, V = 0 V 35 40 DS GS OSS Q Source-Drain Recovery Charge 0 0 RR All measurements were done with substrate shorted to source. Figure 1: Typical Output Characteristics Figure 2: Transfer Characteristics 100 100 25C 90 125C 80 80 V = 3V DS 70 V = 5 GS V = 4 60 GS 60 V = 3 GS 50 V = 2 GS 40 40 30 20 20 10 0 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 V Drain to Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Figure 3: R vs V for Various Current Figure 4: R vs V for Various Temperature DS(on) GS DS(on) GS 20 20 I = 10 A D 18 25C I = 20 A D 125C I = 40 A 16 D 15 ID = 25 A I = 80 A D 14 12 10 10 8 6 5 4 2 0 0 2 2.5 3 3.5 4 4.5 5 5.5 2 2.5 3 3.5 4 4.5 5 5.5 V Gate to Source Voltage (V) GS V Gate-to-Source Voltage (V) GS Figure 5: Capacitance Figure 6: Gate Charge 1.4 EPC EFFICIENT POWER CONVERSION CORPORATION WWW.EPC-CO.COM COPYRIGHT 2013 5 PAGE 2 COSS = CGD + CSD I = 25 A D 4.5 1.2 V = 50 V C = C + C DS ISS GD GS 4 C = C RSS GD 1 3.5 3 0.8 2.5 0.6 2 1.5 0.4 1 0.2 0.5 0 0 0 10 20 30 40 50 60 70 80 90 100 0 2 4 6 8 10 V Drain to Source Voltage (V) Q Gate Charge (nC) DS G I Drain Current (A) D R Drain to Source Resistance (m) C Capacitance (nF) DS(ON) V Gate to Source Voltage (V) R Drain to Source Resistance (m) I Drain Current (A) GS DS(ON) D