X-On Electronics has gained recognition as a prominent supplier of EPC2007C across the USA, India, Europe, Australia, and various other global locations. EPC2007C are a product manufactured by TDK. We provide cost-effective solutions for EPC2007C, ensuring timely deliveries around the world.

EPC2007C TDK

EPC2007C electronic component of TDK
EPC2007C TDK
EPC2007C Unclassified
EPC2007C

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See Product Specifications
Part No. EPC2007C
Manufacturer: TDK
Category: Unclassified
Description: TRANS GAN 100V 6A BUMPED DIE
Datasheet: EPC2007C Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
2500: USD 1.2027 ea
Line Total: USD 3006.75 
Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 1
Multiples : 1
1 : USD 2.6304
10 : USD 2.2668
100 : USD 1.8217
500 : USD 1.4967
1000 : USD 1.2401

0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 1
Multiples : 1
1 : USD 2.6304
10 : USD 2.2668
100 : USD 1.8217
500 : USD 1.4967
1000 : USD 1.2401

0
Ship by Tue. 15 Apr to Mon. 21 Apr
MOQ : 2500
Multiples : 2500
2500 : USD 1.2027
5000 : USD 1.1118

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Packaging
Brand
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EPC2007C from our TDK manufacturer, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EPC2007C and other electronic components in the TDK manufacturer and beyond.

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eGaN FET DATASHEET EPC2007C EPC2007C Enhancement Mode Power Transistor D V , 100 V DS EFFICIENT POWER CONVERSION G R , 30 m DS(on) I , 6 A HAL D S Gallium Nitrides exceptionally high electron mobility and low temperature coefficient allows very low R , while its lateral device structure and majority carrier diode provide exceptionally low Q DS(on) G and zero Q . The end result is a device that can handle tasks where very high switching frequency, RR and low on-time are beneficial as well as those where on-state losses dominate. EPC2007C eGaN FETs are supplied only in Maximum Ratings passivated die form with solder bumps PARAMETER VALUE UNIT V Drain-to-Source Voltage (Continuous) 100 V Applications DS High Speed DC-DC conversion Continuous (T = 25C, R = 62C/W) 6 A JA I A Class-D Audio D Pulsed (25C, T = 300 s) 40 PULSE Wireless Power Transfer Gate-to-Source Voltage 6 Lidar V V GS Gate-to-Source Voltage -4 Benefits T Operating Temperature -40 to 150 J C Ultra High Efficiency T Storage Temperature -40 to 150 STG Zero Q RR Ultra Low Q G Ultra Small Footprint Thermal Characteristics PARAMETER TYP UNIT R Thermal Resistance, Junction-to-Case 3.6 JC R Thermal Resistance, Junction-to-Board 9.3 C/W JB R Thermal Resistance, Junction-to-Ambient (Note 1) 80 JA Note 1: R is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board. JA See eGaN FET DATASHEET EPC2007C Dynamic Characteristics (T = 25C unless otherwise stated) J PARAMETER TEST CONDITIONS MIN TYP MAX UNIT C Input Capacitance 170 220 ISS C Reverse Transfer Capacitance V = 50 V, V = 0 V 1.9 2.7 pF RSS DS GS C Output Capacitance 110 165 OSS R Gate Resistance 0.4 G Q Total Gate Charge V = 50 V, V = 5 V, I = 6 A 1.6 2.2 G DS GS D Q Gate-to-Source Charge 0.6 GS Q Gate-to-Drain Charge V = 50 V, I = 6 A 0.3 0.6 GD DS D nC Q Gate Charge at Threshold 0.4 G(TH) Q Output Charge V = 50 V, V = 0 V 8.3 12.5 OSS DS GS Q Source-Drain Recovery Charge 0 RR All measurements were done with substrate connected to source. Note 2: C is a fixed capacitance that gives the same stored energy as C while V is rising from 0 to 50% BV . OSS(ER) OSS DS DSS Note 3: C is a fixed capacitance that gives the same charging time as C while V is rising from 0 to 50% BV . OSS(TR) OSS DS DSS Figure 1: Typical Output Characteristics at 25 C Figure 2: Transfer Characteristics 40 35 V = 5 V GS V = 4 V GS 30 V = 3 V GS V = 2 V GS 25 25C 125C 20 V = 3 V DS 15 10 5 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V Drain-to-Source Voltage (V) V Gate-to-Source Voltage (V) DS GS Figure 3: R vs. V for Various Drain Currents Figure 4: R vs. V for Various Temperatures DS(on) GS DS(on) GS 100 I = 3 A D I = 6 A D 80 I = 9 A D I = 12 A D 60 25C 125C 40 I = 6 A D 20 0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 V Gate-to-Source Voltage (V) V Gate-to-Source Voltage (V) GS GS EPC THE LEADER IN GaN TECHNOLOGY WWW.EPC-CO.COM COPYRIGHT 2019 2 40 35 30 25 20 15 10 5 0 100 80 60 40 20 0 I Drain Current (A) R Drain-to-Source Resistance (m) D DS(on) I Drain Current (A) R Drain-to-Source Resistance (m ) D DS(on)

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