X-On Electronics has gained recognition as a prominent supplier of 2N7002KDW MOSFET across the USA, India, Europe, Australia, and various other global locations. 2N7002KDW MOSFET are a product manufactured by TECH PUBLIC. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

2N7002KDW TECH PUBLIC

2N7002KDW electronic component of TECH PUBLIC
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See Product Specifications
Part No.2N7002KDW
Manufacturer: TECH PUBLIC
Category: MOSFET
Description: SOT-363 MOSFETs ROHS
Datasheet: 2N7002KDW Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

20: USD 0.0389 ea
Line Total: USD 0.78

Availability - 27473
Ship by Mon. 05 Aug to Thu. 08 Aug
MOQ: 20  Multiples: 20
Pack Size: 20
Availability Price Quantity
27412
Ship by Mon. 05 Aug to Thu. 08 Aug
MOQ : 20
Multiples : 20
20 : USD 0.039
200 : USD 0.0308
600 : USD 0.0263
3000 : USD 0.0235
9000 : USD 0.0211
21000 : USD 0.0198

   
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We are delighted to provide the 2N7002KDW from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the 2N7002KDW and other electronic components in the MOSFET category and beyond.

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The 2N7002KDW is a SOT-363 MOSFET manufactured by TECH PUBLIC. This component is a low-voltage, low-power, N-channel enhancement-mode MOSFET, which is optimized for use in power management and level shifting applications. The device features a breakdown voltage of 8 V, an on-state resistance of 0.6 O max, and an operating temperature range from -55°C to +150°C. It is packaged in a RoHS-compliant SOT-363 surface-mount package and its RoHS-compliant construction makes it suitable for use in lead-free and other RoHS-compliant applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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