X-On Electronics has gained recognition as a prominent supplier of AO7800 MOSFETs across the USA, India, Europe, Australia, and various other global locations. AO7800 MOSFETs are a product manufactured by TECH PUBLIC. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

AO7800 TECH PUBLIC

AO7800 electronic component of TECH PUBLIC
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See Product Specifications
Part No.AO7800
Manufacturer: TECH PUBLIC
Category: MOSFETs
Description: SOT-363 MOSFETs ROHS
Datasheet: AO7800 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1443 ea
Line Total: USD 0.72 
Availability - 7342
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
7342
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1443
50 : USD 0.1174
150 : USD 0.1041
500 : USD 0.0939
3000 : USD 0.075
6000 : USD 0.071

   
Manufacturer
Product Category
Category
Rohs
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We are delighted to provide the AO7800 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the AO7800 and other electronic components in the MOSFETs category and beyond.

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The AO7800 is a SOT-363 MOSFET manufactured by TECH PUBLIC, which is RoHS compliant. The MOSFETs feature a V(BR)DSS breakdown voltage of up to 30V and an R(DS)on drain-source resistance of up to 40mOhm. This MOSFET is ideal for high frequency / switching applications that require low power consumption due to its high transconductance and low channel on-resistance. It is also designed for low EMI performance and has a low parasitic capacitance, making it a great choice for applications requiring fast switching speeds.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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