X-On Electronics has gained recognition as a prominent supplier of FDMC5614P MOSFET across the USA, India, Europe, Australia, and various other global locations. FDMC5614P MOSFET are a product manufactured by TECH PUBLIC. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

FDMC5614P TECH PUBLIC

FDMC5614P electronic component of TECH PUBLIC
Images are for reference only
See Product Specifications
Part No.FDMC5614P
Manufacturer: TECH PUBLIC
Category: MOSFET
Description: DFN3x3-8 MOSFETs ROHS
Datasheet: FDMC5614P Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4869 ea
Line Total: USD 0.49

Availability - 3255
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
3129
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 0.3525
10 : USD 0.312
30 : USD 0.2952
100 : USD 0.2733
500 : USD 0.2345
1000 : USD 0.2272

   
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We are delighted to provide the FDMC5614P from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FDMC5614P and other electronic components in the MOSFET category and beyond.

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The FDMC5614P is an N-channel enhancement-mode field-effect transistor manufactured by Tech Public with a small DFN3x3-8 package in a RoHS-compliant form. It is optimized for low on-resistance and is ideal for switching applications. It features single-sided copper source and drain contacts, allowing for a lower RDSON and higher current capacities. The source and drain pins eliminate the need for a second ground connection. It also features an integrally bonded body diode which improves resistance to power surges and speeds up recovery times. This MOSFET is suitable for a variety of automotive, industrial, and consumer applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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