X-On Electronics has gained recognition as a prominent supplier of NTGS5120PT1G MOSFET across the USA, India, Europe, Australia, and various other global locations. NTGS5120PT1G MOSFET are a product manufactured by TECH PUBLIC. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

NTGS5120PT1G TECH PUBLIC

NTGS5120PT1G electronic component of TECH PUBLIC
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See Product Specifications
Part No.NTGS5120PT1G
Manufacturer: TECH PUBLIC
Category: MOSFET
Description: SOT23-6 MOSFETs ROHS
Datasheet: NTGS5120PT1G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 0.2023 ea
Line Total: USD 1.01

Availability - 11879
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
1490
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ : 5
Multiples : 5
5 : USD 0.1986
50 : USD 0.1598
150 : USD 0.1433
500 : USD 0.1226
3000 : USD 0.1133
6000 : USD 0.1077

   
Manufacturer
Product Category
Category
Rohs
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We are delighted to provide the NTGS5120PT1G from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTGS5120PT1G and other electronic components in the MOSFET category and beyond.

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The NTGS5120PT1G is a MOSFET manufactured by TECH PUBLIC in a SOT23-6 package and conforms to ROHS standards. This MOSFET device is composed of five independent vertical N-channel MOSFETs in a single device package. It has very low RDS(ON) of 0.56O and Gate Charge(Qg) of 2.1nC, along with improved output current capability and better thermal properties for enhanced power density and efficiency. It also features very low power consumption with 2.6V gate drive in forced-mode operation. This device is suitable for a variety of applications such as switching, motor control and load management.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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