Si7431DP
Vishay Siliconix
P-Channel 200 V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
Halogen-free According to IEC 61249-2-21
V (V) R ()I (A) Q (Typ.)
DS DS(on) D g
Definition
0.174 at V = - 10 V - 3.8
GS
TrenchFET Power MOSFETs
- 200 88
0.180 at V = - 6 V - 3.6
GS
Ultra-Low On-Resistance Critical for
Application
Low Thermal Resistance PowerPAK
Package with Low 1.07 mm Profile
PowerPAK SO-8
100 % R and Avalanche Tested
g
Compliant to RoHS Directive 2002/95/EC
S
6.15 mm 5.15 mm APPLICATIONS S
1
S
2 Active Clamp in Intermediate
S
3
DC/DC Power Supplies
G
4
G
D
8
D
7
D
6
D
5
Bottom View
D
Ordering Information: Si7431DP-T1-E3 (Lead (Pb)-free)
Si7431DP-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted)
A
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage V - 200
DS
V
Gate-Source Voltage V 20
GS
T = 25 C - 3.8 - 2.2
A
a
Continuous Drain Current (T = 150C) I
J D
T = 70 C - 3.0 - 1.8
A
Pulsed Drain Current I - 30 A
DM
a
Continuous Source Current (Diode Conduction) I - 4.2 - 1.6
S
Single Pulse Avalanche Current I - 30
AS
L = 0.1 mH
Single Pulse Avalanche Energy E 45 mJ
AS
T = 25 C 5.4 1.9
A
a
Maximum Power Dissipation P W
D
T = 70 C 3.4 1.2
A
Operating Junction and Storage Temperature Range T , T - 55 to 150
J stg
C
b, c
Soldering Recommendations (Peak Temperature) 260
THERMAL RESISTANCE RATINGS
Parameter Symbol TypicalMaximumUnit
t 10 s 18 23
a
Maximum Junction-to-Ambient R
thJA
Steady State 50 65 C/W
Maximum Junction-to-Case (Drain) Steady State R 1.0 1.5
thJC
Notes:
a. Surface mounted on 1" x 1" FR4 board.
b. See solder profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper
(not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not
required to ensure adequate bottom side solder interconnection.
c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.
Document Number: 73116 www.vishay.com
S10-2246-Rev. E, 04-Oct-10 1Si7431DP
Vishay Siliconix
SPECIFICATIONS (T = 25 C, unless otherwise noted)
J
Parameter Symbol Test Condition Min.Typ.Max.Unit
Static
Gate Threshold Voltage V V = V , I = - 250 A - 2.0 - 4.0 V
GS(th) DS GS D
Gate-Body Leakage I V = 0 V, V = 20 V 100 nA
GSS DS GS
V = - 200 V, V = 0 V - 1
DS GS
Zero Gate Voltage Drain Current I A
DSS
V = - 200 V, V = 0 V, T = 70 C - 10
DS GS J
a
On-State Drain Current I V - 10 V, V = - 10 V - 20 A
D(on) DS GS
V = - 10 V, I = - 3.8 A 0.145 0.174
GS D
a
Drain-Source On-State Resistance R
DS(on)
V = - 6 V, I = - 3.6 A 0.147 0.180
GS D
a
Forward Transconductance g V = - 15 V, I = - 3.8 A 17 S
fs DS D
a
Diode Forward Voltage V I = - 4.2 A, V = 0 V - 0.78 - 1.2 V
SD S GS
b
Dynamic
Total Gate Charge Q 88 135
g
Gate-Source Charge Q 16.5
V = - 75 V, V = - 10 V, I = - 5.2 A nC
gs
DS GS D
Gate-Drain Charge Q 25
gd
Gate Resistance R 1.534.5
g
Turn-On Delay Time t 23 40
d(on)
Rise Time t 49 75
r V = - 75 V, R = 15.5
DD L
I - 4.8 A, V = - 10 V, R = 6
Turn-Off Delay Time t 110180
D GEN g ns
d(off)
Fall Time t 66 100
f
Source-Drain Reverse Recovery Time t I = - 2.9 A, dI/dt = 100 A/s 75 120
rr F
Notes:
a. Pulse test; pulse width 300 s, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS (25 C, unless otherwise noted)
40 50
V = 10 V thru 5 V
GS
35
40
30
25
30
20
20
15
T = 125 C
C
10
10 25 C
5
4 V
- 55 C
0 0
0 2468 10 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0
V - Drain-to-Source Voltage (V)
DS
V - Gate-to-Source Voltage (V)
GS
Output Characteristics
Transfer Characteristics
www.vishay.com Document Number: 73116
2 S10-2246-Rev. E, 04-Oct-10
I - Drain Current (A)
D
I - Drain Current (A)
D