X-On Electronics has gained recognition as a prominent supplier of CSD18563Q5AT MOSFETs across the USA, India, Europe, Australia, and various other global locations. CSD18563Q5AT MOSFETs are a product manufactured by Texas Instruments. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CSD18563Q5AT Texas Instruments

Name: CSD18563Q5AT
Brand: Texas Instruments
SKU: CSD18563Q5AT_Texas Instruments
Availability: InStock
Rating: 5 (11 reviews)

CSD18563Q5AT electronic component of Texas Instruments

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Part No.	CSD18563Q5AT
Manufacturer:	Texas Instruments
Category:	MOSFETs
Description:	MOSFET 60V NCh NexFET Power MOSFET
Datasheet:
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.988 ea
Line Total: USD 1.99

Availability - 498
Ship by Tue. 14 Jan to Thu. 16 Jan

MOQ: 1 Multiples: 1
Pack Size: 1

CSD18563Q5AT More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

498

Ship by Tue. 14 Jan to Thu. 16 Jan

MOQ : 1
Multiples : 1

1 : USD 1.988
5 : USD 1.75
13 : USD 1.344
35 : USD 1.274

Specifications

Manufacturer

Texas Instruments Texas Instruments

Product Category

MOSFETs MOSFETs

RoHS - XON

E E

Id - Continuous Drain Current

100 A 100 A

Vds - Drain-Source Breakdown Voltage

60 V 60 V

Rds On - Drain-Source Resistance

6.8 mOhms 6.8 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

1.7 V 1.7 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

116 W 116 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

VSONP - 8 VSONP - 8

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

15 nC 15 nC

Channel Mode

Enhancement Enhancement

Tradename

Nexfet Nexfet

Configuration

Single Single

Height

1 mm 1 mm

Length

5.75 mm 5.75 mm

Series

Csd18563q5a Csd18563q5a

Transistor Type

1 N - Channel Power Mosfet 1 N - Channel Power Mosfet

Type

Nexfet Power Mosfet Nexfet Power Mosfet

Width

4.9 mm 4.9 mm

Brand

Texas Instruments Texas Instruments

Cnhts

8541290000 8541290000

Development Kit

Tps40170evm - 597 Tps40170evm - 597

Fall Time

1.7 ns 1.7 ns

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Rise Time

6.3 ns 6.3 ns

Factory Pack Quantity :

250 250

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-Off Delay Time

11.4 ns 11.4 ns

Typical Turn-On Delay Time

3.2 ns 3.2 ns

Notes:- Show Stocked Products With Similar Attributes.

CSD18563Q5AT Alternative Parts

We are delighted to provide the CSD18563Q5AT from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CSD18563Q5AT and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

CSD18563Q5AT is a QFN-packaged, high performance NexFET™ Power MOSFET from Texas Instruments (TI). It is rated for a maximum drain source voltage of 75V, and has a maximum DC drain current of 26A. It is optimized for applications such as DC-DC converters and High-side load switches. It features an ultra-low on-resistance of 4.5 mO, making it highly efficient. It also features improved avalanche performance with a maximum avalanche energy of 175mJ. Additionally, its low 1.3 nC gate charge, 7nC output capacitance, and low gate-source charge of 2nC, ensures fast switching speeds, making it ideal for high power applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

A/NSC may also be referenced as

NAT SEMI
NATIONAL SEMI
NATIONAL SEMICONDUCT
National Semiconductor
NS4
NSC
TEXAS
TEXAS INST
TEXAS INST / KLIXON
TEXAS INSTRUMENT
TEXAS INSTRUMENTS
TI
TI9

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Availability	Price	Buy Price	Quantity
498 Ship by Tue. 14 Jan to Thu. 16 Jan MOQ : 1 Multiples : 1	1 : USD 1.988 5 : USD 1.75 13 : USD 1.344 35 : USD 1.274

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