X-On Electronics has gained recognition as a prominent supplier of CSD19537Q3T MOSFETs across the USA, India, Europe, Australia, and various other global locations. CSD19537Q3T MOSFETs are a product manufactured by Texas Instruments. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CSD19537Q3T Texas Instruments

Name: CSD19537Q3T
Brand: Texas Instruments
SKU: CSD19537Q3T_Texas Instruments
Availability: InStock
Rating: 5 (11 reviews)

CSD19537Q3T electronic component of Texas Instruments

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See Product Specifications

Part No.	CSD19537Q3T
Manufacturer:	Texas Instruments
Category:	MOSFETs
Description:	MOSFET 100-V, N channel NexFET power MOSFET, single SON 3 mm x 3 mm, 14.5 mOhm 8-VSON-CLIP -55 to 150
Datasheet:	CSD19537Q3T Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 1.825 ea
Line Total: USD 1.82

Availability - 23109
Ship by Wed. 12 Feb to Fri. 14 Feb

MOQ: 1 Multiples: 1
Pack Size: 1

CSD19537Q3T More Buying Options & Price Grid(s)

Please wait...

Availability Price Buy Price Quantity

577

Ship by Fri. 21 Feb to Wed. 26 Feb

MOQ : 1
Multiples : 1

1 : USD 1.7279
10 : USD 1.4556
30 : USD 1.0077
250 : USD 0.7828
500 : USD 0.7252
1000 : USD 0.6991

23109

Ship by Wed. 12 Feb to Fri. 14 Feb

MOQ : 1
Multiples : 1

1 : USD 1.825
10 : USD 1.212
100 : USD 0.7403
500 : USD 0.6611
1000 : USD 0.649
5000 : USD 0.6424
10000 : USD 0.638
25000 : USD 0.6347

69

Ship by Wed. 12 Feb to Fri. 14 Feb

MOQ : 1
Multiples : 1

1 : USD 1.834
5 : USD 1.61
15 : USD 1.148
42 : USD 1.092
250 : USD 1.05

Specifications

Manufacturer

Texas Instruments Texas Instruments

Product Category

MOSFETs MOSFETs

Id - Continuous Drain Current

53 A 53 A

Vds - Drain-Source Breakdown Voltage

100 V 100 V

Rds On - Drain-Source Resistance

14.5 mOhms 14.5 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

2.6 V 2.6 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

83 W 83 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

VSON - CLIP - 8 VSON - CLIP - 8

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

16 nC 16 nC

Channel Mode

Enhancement Enhancement

Tradename

Nexfet Nexfet

Configuration

Single Single

Height

1 mm 1 mm

Length

3.3 mm 3.3 mm

Series

Csd19537q3 Csd19537q3

Transistor Type

1 N - Channel 1 N - Channel

Width

3.3 mm 3.3 mm

Brand

Texas Instruments Texas Instruments

Forward Transconductance - Min

45 S 45 S

Cnhts

8541290000 8541290000

Fall Time

3 ns 3 ns

Hts Code

8541290095 8541290095

Mxhts

85412999 85412999

Product Type

Mosfet Mosfet

Rise Time

3 ns 3 ns

Factory Pack Quantity :

250 250

Subcategory

Mosfets Mosfets

Taric

8541290000 8541290000

Typical Turn-Off Delay Time

10 ns 10 ns

Typical Turn-On Delay Time

5 ns 5 ns

Notes:- Show Stocked Products With Similar Attributes.

CSD19537Q3T Alternative Parts

We are delighted to provide the CSD19537Q3T from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CSD19537Q3T and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

CSD19537Q3T is a MOSFET from Texas Instruments that is designed for high-side and low-side switching applications. It has a drain-source voltage of 30 V, a continuous drain current of 0.98 A, and a total power dissipation of 4.7 W. It features a low on-state resistance of 0.077 O and a fast switching speed of 20 ns. This MOSFET has an O-MESH passivation resulting in improved switching performance. It also features a TO-247-3 package that provides lower thermal resistance and higher reliability.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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Availability	Price	Buy Price	Quantity
577 Ship by Fri. 21 Feb to Wed. 26 Feb MOQ : 1 Multiples : 1	1 : USD 1.7279 10 : USD 1.4556 30 : USD 1.0077 250 : USD 0.7828 500 : USD 0.7252 1000 : USD 0.6991

23109 Ship by Wed. 12 Feb to Fri. 14 Feb MOQ : 1 Multiples : 1	1 : USD 1.825 10 : USD 1.212 100 : USD 0.7403 500 : USD 0.6611 1000 : USD 0.649 5000 : USD 0.6424 10000 : USD 0.638 25000 : USD 0.6347

69 Ship by Wed. 12 Feb to Fri. 14 Feb MOQ : 1 Multiples : 1	1 : USD 1.834 5 : USD 1.61 15 : USD 1.148 42 : USD 1.092 250 : USD 1.05

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