VS-MURB1620CTHM3, VS-MURB1620CT-1HM3
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Vishay Semiconductors
Ultrafast Rectifier, 2 x 8 A FRED Pt
FEATURES
Ultrafast recovery time
Low forward voltage drop
Low leakage current
2
175 C operating junction temperature
3
3
Meets MSL level 1, per J-STD-020, LF maximum
1 2
1
peak of 260 C
2
TO-263AB (D PAK)
TO-262AA
AEC-Q101 qualified
Base
Base
common
common Meets JESD 201 class 1 whisker test
cathode
cathode
Material categorization: for definitions of compliance
2 2
please see www.vishay.com/doc?99912
DESCRIPTION / APPLICATIONS
12 3
12 3
MUR.. series are the state of the art ultrafast recovery
rectifiers specifically designed with optimized performance
Anode Common Anode Anode Common Anode
1 cathode 2 1 cathode 2
of forward voltage drop and ultrafast recovery time.
VS-MURB1620CTHM3 VS-MURB1620CT-1HM3
The planar structure and the platinum doped life time
control, guarantee the best overall performance,
ruggedness and reliability characteristics.
PRODUCT SUMMARY
These devices are intended for use in the output rectification
2
Package TO-263AB (D PAK), TO-262AA
stage of SMPS, UPS, DC/DC converters as well as
I 2 x 8 A
F(AV)
freewheeling diode in low voltage inverters and chopper
motor drives.
V 200 V
R
Their extremely optimized stored charge and low recovery
V at I 0.895 V
F F
current minimize the switching losses and reduce over
t (typ) 19 ns
rr
dissipation in the switching element and snubbers.
T max. 175 C
J
Diode variation Common cathode
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOLTEST CONDITIONSMAX. UNITS
Peak repetitive reverse voltage V 200 V
RRM
per leg 8.0
Average rectified forward current I
F(AV)
total device Rated V , T = 150 C 16
R C
A
Non-repetitive peak surge current per leg I 100
FSM
Peak repetitive forward current per leg I Rated V , square wave, 20 kHz, T = 150 C 16
FM R C
Operating junction and storage temperatures T , T -65 to +175 C
J Stg
ELECTRICAL SPECIFICATIONS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
V ,
BR
Breakdown voltage, blocking voltage I = 100 A 200 - -
R
V
R
I = 8 A - - 0.975
V
F
Forward voltage V I = 8 A, T = 150 C - - 0.895
F F J
V = V rated - - 5
R R
T = 150 C, V = V rated - - 250
J R R
Reverse leakage current I A
R
V = 200 V - 25 -
R
Junction capacitance C Measured lead to lead 5 mm from package body - 8.0 - pF
T
Series inductance L I = 100 A 200 - - nH
S R
Revision: 10-Jul-15 Document Number: 94852
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000VS-MURB1620CTHM3, VS-MURB1620CT-1HM3
www.vishay.com
Vishay Semiconductors
DYNAMIC RECOVERY CHARACTERISTICS (T = 25 C unless otherwise specified)
J
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
I = 1.0 A, dI /dt = 100 A/s, V = 30 V - 19 -
F F R
Reverse recovery time t T = 25 C -20- ns
rr J
T = 125 C - 34 -
J
I = 8 A
F
T = 25 C - 1.7 -
J
Peak recovery current I dI /dt = 200 A/s A
RRM F
T = 125 C - 4.2 -
J
V = 160 V
R
T = 25 C - 23 -
J
Reverse recovery charge Q nC
rr
T = 125 C - 75 -
J
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Maximum junction and storage
T , T -65 - 175 C
J Stg
temperature range
Thermal resistance,
R --3.0
thJC
junction to case per leg
Thermal resistance,
R -- 50 C/W
thJA
junction to ambient per leg
Thermal resistance,
R Mounting surface, flat, smooth and greased - 0.5 -
thCS
case to heatsink
-2.0 - g
Weight
-0.07- oz.
6.0 12 kgf cm
Mounting torque -
(5.0) (10) (lbf in)
2
Case style TO-263AB (D PAK) MURB1620CTH
Marking device
Case style TO-262AA MURB1620CT-1H
100 100
T = 175 C
J
10
T = 150 C
J
10
T = 125 C
J
1
T = 175 C
J
T = 100 C
J
T = 150 C
J
0.1
T = 25 C
J
1
0.01
T = 25 C
J
0.1 0.001
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 50 100 150 200 250
V - Forward Voltage Drop (V) V - Reverse Voltage (V)
F R
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
Revision: 10-Jul-15 Document Number: 94852
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
I - Instantaneous Forward Current (A)
F
I - Reverse Current (A)
R