6N135,6N136 TOSHIBA Photocoupler IRED & Photo IC 6N135, 6N136 Digital Logic Isolation Unit: mm Line Receiver Power Supply Control Switching Power Supply Transistor Inverter The TOSHIBA 6N135 and 6N136 consists of an infrared emitting diode and a one chip photo diode transistor. Each unit is 8 lead DIP package. Isolation voltage: 2500 V (min) rms High speed: t , t = 0.5 s (typ.) (R = 1.9k) pHL pLH L TTL compatible If base pin is open, output signal will be noisy by environmental TOSHIBA 11 10C4S condition. For this base, TLP550 is suitable Weight: 0.54 g (typ.) UL-recognized: UL 1577, File No.E67349 CQC-approved(6N136): GB4943.1,GB8898 Japan and Factory Pin Configurations 1 88 2 7 3 6 4 5 1 : N .C. 2 : ANODE 3 : CATHODE 4 : N.C. 5 : EMITTER 6 : COLLECTOR 7 : BASE, ANODE 8 : CATHODE I CC 8 V CC II FF I B 7 V B I 2 V O F 6 V O 3 5 GND Start of commercial production 1982-10 2019 1 2019-06-10 Toshiba Electronic Devices & Storage Corporation 6N135,6N136 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Forward current (Note 1) I 25 mA F Pulse forward current (Note 2) I 50 mA FP Total pulse forward current (Note 3) I 1 A FPT Reverse voltage V 5 V R Diode power dissipation (Note 4) P 45 mW D Output current I 8 mA O Peak output current I 16 mA OP Emitterbase reverse voltage (pin 57) V 5 V EB Supply voltage V 0.5 to 15 V CC Output voltage V 0.5 to 15 V O Base current (pin 7) I 5 mA B Output power dissipation (Note 5) P 100 mW o Operating temperature range T 55 to 100 C opr Storage temperature range T 55 to 125 C stg Lead solder temperature (10s) (Note 6) T 260 C sol Isolation voltage (Note 7) BV 2500 V S rms Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc.). (Note 1) Derate 0.8 mA above 70C. (Note 2) 50 % duty cycle, 1 ms pulse width. Derate 1.6 mA / C above 70 C. (Note 3) Pulse width 1 s, 300pps. (Note 4) Derate 0.9 mW / C above 70 C. (Note 5) Derate 2 mW / C above 70 C. (Note 6) Soldering portion of lead: Up to 2 mm from the body of the device. (Note 7) R.H. 60 %, AC, 60 s 2019 2 2019-06-10 Toshiba Electronic Devices & Storage Corporation Detector LED