CRS15(TE85L,Q,M) Toshiba

CRS15 TOSHIBA Schottky Barrier Diode CRS15 Switching Mode Power Supply Applications Unit: mm Portable Equipment Battery Applications Repetitive peak reverse voltage : V = 30 V RRM Forward current : I = 3 A F (DC) Peak forward voltage : V = 0.52 V (max) FM Small, thin package suitable for high-density board assembly TM Toshiba Nickname: S-FLAT Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Repetitive peak reverse voltage V 30 V RRM Forward current (DC) I 3 (Note 1) A F (DC) Non-repetitive peak forward surge current I 30 (50 Hz) A FSM Junction temperature T 40 to 150 C j Storage temperature T 40 to 150 C stg JEDEC Note 1: Ta = 69C : Device mounted on a ceramic board JEITA Board size : 50 mm 50 mm Soldering land size : 2 mm 2 mm TOSHIBA 3-2A1S Board thickness : 0.64 mm Weight: 0.013 g (typ.) DC waveform Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit V I = 0.1 A (pulse test) 0.35 FM (1) FM Peak forward voltage V I = 1 A (pulse test) 0.415 V FM (2) FM V I = 3 A (pulse test) 0.47 0.52 FM (3) FM I V = 5 V (pulse test) 0.8 RRM (1) RRM Repetitive peak reverse current A I V = 30 V (pulse test) 10 50 RRM (2) RRM Junction capacitance C V = 10 V, f = 1 MHz 90 pF j R Device mounted on a ceramic board board size : 50 mm 50 mm 70 soldering land size : 2 mm 2 mm board thickness : 0.64 mm Thermal resistance (junction to ambient) R C/W th (j-a) Device mounted on a glass-epoxy board board size : 50 mm 50 mm 140 soldering land size : 6 mm 6 mm board thickness : 1.6 mm Thermal resistance (junction to lead) R 20 C/W th (j-) Start of commercial production 2008-08 1 2018-07-09 CRS15 Marking Abbreviation Code Part No. SE CRS15 Land pattern dimensions for reference only Unit: mm 1.2 1.2 2.8 Handling Precaution 1) Schottky barrier diodes have reverse current characteristic compared to other diodes. There is a possibility SBD may cause thermal runaway when it is used under high temperature or high voltage. Please take forward and reverse loss into consideration during design. 2) The absolute maximum ratings of a semiconductor device are a set of ratings that must not be exceeded,even for a moment. Do not exceed any of these ratings. The following are the general derating methods that we recommend when you design a circuit with a device. V : Use this rating with reference to the above. V has a temperature coefficient of 0.1%/C. Take RRM RRM this temperature coefficient into account designing a device at low temperature. I I : We recommend that the worst case current be no greater than 80% of the absolute F(AV) and F(DC) maximum rating of I and T be below 120C. When using this device, take the margin into F(AV) j consideration by using an allowable Ta max-I curve. F(AV) I : This rating specifies the non-repetitive peak current. This is only applied for an abnormal FSM operation, which seldom occurs during the lifespan of the device. T : Derate this rating when using a device in order to ensure high reliability. We recommend that the j device be used at a T of below 120C. j 3) Thermal resistance between junction and ambient fluctuates depending on the devices mounting condition. When using a device, design a circuit board and a soldering land size to match the appropriate thermal resistance value. 4) For other design considerations, see the Toshiba website. 2 2018-07-09