DF2S5M4CT,L3F Toshiba

DF2S5M4CT ESD Protection Diodes Silicon Epitaxial Planar DF2S5M4CTDF2S5M4CTDF2S5M4CTDF2S5M4CT 1. 1. GeneralGeneral 1. 1. GeneralGeneral The DF2S5M4CT is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2S5M4CT provides low dynamic resistance and superior protective performance. Furthermore, it is optimum the high speed signal application for the low capacitance performance. The DF2S5M4CT is housed in an ultra-compact package (1.0 mm 0.6 mm) to meet applications that require a small footprint. 2. 2. 2. 2. ApplicationsApplicationsApplicationsApplications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Suitable for use with a 3.3 V signal line. (V 3.6 V) RWM (2) Protects devices with its high ESD performance. (V = 20 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.3 (typ.)) DYN (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (V = 8 V I = 2 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (1.0 mm 0.6 mm size (Nickname: CST2)) 4. 4. 4. 4. PackagingPackagingPackagingPackaging CST2 Start of commercial production 2016-12 2016-2018 2018-01-25 1 Toshiba Electronic Devices & Storage Corporation Rev.3.0DF2S5M4CT 5. 5. 5. 5. Example of Circuit DiagramExample of Circuit DiagramExample of Circuit DiagramExample of Circuit Diagram 6. 6. 6. 6. Quick Reference DataQuick Reference DataQuick Reference DataQuick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 3.6 V RWM Total capacitance C V = 0 V, f = 1 MHz 0.35 0.5 pF t R Dynamic resistance R (Note 2) 0.3 DYN Electrostatic discharge voltage V (Note 3) 20 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 8 A and I = 16 A. PP1 PP2 Note 3: Criterion: No damage to devices. 2016-2018 2018-01-25 2 Toshiba Electronic Devices & Storage Corporation Rev.3.0