TA76431F(TE12L,F) Toshiba

TA76431F/FR TOSHIBA Bipolar Linear Integrated Circuit Silicon Monolithic TA76431F,TA76431FR Adjustable Precision Shunt Regulator Features Precision Reference Voltage: V = 2.495 V 2.2% REF Small Temperature Coefficient: V = 46 ppm/C REF Adjustable Output Voltage: V V 36 V REF OUT Low Dynamic Output Impedance: Z = 0.15 (Typ.) KA Small Flat Package TA76431FR is a new Toshiba shunt regulator. This devices pin assignment is the reverse of that of the Weight: 0.05 g (typ.) TA76431F. Functional Block Diagram Circuit Symbol Reference (REF) Cathode (K) Cathode (K) Reference (REF) Anode (A) Anode (A) This IC contains electrostatic sensitive elements. Please take care to avoid generating static electricity when handling these devices. Marking (1) TA76431F (2) TA76431FR Part No. (or abbreviation code) Part No. (or abbreviation code) A S B S Note 1 Note 1 Lot No. Lot No. Note 1: A line beside a Lot No. identifies the indication of product Labels. Without a line: Pb /INCLUDES > MCV With a line: G /RoHS COMPATIBLE or G /RoHS Pb Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. Pin Assignment No. (1) TA76431F (2) TA76431FR 1 Cathode (K) Reference (REF) 2 Anode (A) Anode (A) 3 Reference (REF) Cathode (K) 1 2 3 1 2012-03-30 TA76431F/FR How to Order Packing Type and Capacity No. Product No. Package Type TA76431F (F) On cut tape (TE12L,F): 100 pcs/tape section (1) TA76431F (TE12L,F) PW-Mini (SOT-89) Embossed tape: 1000 pcs/reel (surface-mount type) TA76431FR (F) On cut tape (TE12L,F): 100 pcs/tape section (2) TA76431FR (TE12L,F) Embossed tape: 1000 pcs/reel Equivalent Circuit Cathode Reference Q 10 Q Q 3 4 Q 2 Q 11 Q 5 C 2 Q 1 Q 6 R 9 Q Q 7 9 Q 8 Anode Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Cathode voltage V 37 V KA Cathode current I 100 to 150 mA K Reference voltage V 7 V REF Reference current I 50 A REF Reference-anode reverse current I 10 mA REF 500 Power dissipation (Ta = 25C) P mW D 1000 (Note 2) Operating temperature T 40 to 85 C opr Storage temperature T 55 to 150 C stg 2 Note 2: Mounted on ceramic substrate (250 mm 0.8 mm (t)) Note 3: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2012-03-30 R 6 R 5 R R 8 7 R 3 R 4 R 2 C 1 R 1