TC74HC03AF(F) Toshiba

TC74HC03AP/AF/AFN TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HC03AP,TC74HC03AF,TC74HC03AFN Quad 2-Input NAND Gate (open drain) Note: xxxFN (JEDEC SOP) is not available in Japan. The TC74HC03A is a high speed CMOS 2-INPUT NAND 2 TC74HC03AP GATE fabricated with silicon gate C MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. Pin configuration and function are the same as the TC74HC00A. But the TC74HC03A has, as its outputs, high performance MOS N-channel transistors. (open-drain outputs) This device can, thefore, with a suitable pull-up resistors, be used in wired-AND, LED driver and other application. All inputs are equipped with protection circuits against static discharge or transient excess voltage. TC74HC03AF Features High speed: t = 5 ns (typ.) at V = 5 V pz CC Low power dissipation: I = 1 A (max) at Ta = 25C CC High noise immunity: V = V = 28% V (min) NIH NIL CC Output drive capability: 10 LSTTL loads Wide operating voltage range: V (opr) = 2~6 V CC TC74HC03AFN Open drain structure Pin and function compatible with 74LS03 Pin Assignment Weight DIP14-P-300-2.54 : 0.96 g (typ.) SOP14-P-300-1.27A : 0.18 g (typ.) SOL14-P-150-1.27 : 0.12 g (typ.) IEC Logic Symbol 1 2007-10-01 TC74HC03AP/AF/AFN Truth Table A B Y L L Z L H Z H L Z H H L Z: High impedance System Diagram (per gate) Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range V 0.5~7 V CC DC input voltage V 0.5~V + 0.5 V IN CC DC output voltage V 0.5~V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I +25 mA OUT DC V /ground current I 50 mA CC CC Power dissipation P 500 (DIP) (Note 2)/180 (SOP) mW D Storage temperature T 65~150 C stg Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = 40C~65C. From Ta = 65C to 85C a derating factor of 10 mW/C shall be applied until 300 mW. Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage V 2~6 V CC Input voltage V 0~V V IN CC Output voltage V 0~V V OUT CC Operating temperature T 40~85 C opr 0~1000 (V = 2.0 V) CC Input rise and fall time t , t 0~500 (V = 4.5 V) ns r f CC 0~400 (V = 6.0 V) CC Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. 2 2007-10-01