TC74HCU04AFT(EL) Toshiba

TC74HCU04AP/AF/AFN/AFT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74HCU04AP,TC74HCU04AF,TC74HCU04AFN, TC74HCU04AFT Hex Inverter Note: xxxFN (JEDEC SOP) is not available in Japan. The TC74HCU04A is a high speed CMOS INVERTER 2 fabricated with silicon gate C MOS technology. TC74HCU04AP It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. Since the internal circit is composed of a single stage inverter, it can be used in analog applications such as crystal oscllators. All inputs are equipped with protection circuits against static discharge or transient excess voltage. Features TC74HCU04AF High speed: t = 4 ns (typ.) at V = 5 V pd CC Low power dissipation: I = 1 A (max) at Ta = 25C CC High noise immunity: V = V = 10% V (min) NIH NIH CC Output drive capability: 10 LSTTL loads Symmetrical output impedance: I = I = 4 mA (min) OH OL Balanced propagation delays: t t pLH pHL Wide operating voltage range: V (opr) = 2 to 6 V CC Pin and function compatible with 74LS04 TC74HCU04AFN Pin Assignment TC74HCU04AFT Weight DIP14-P-300-2.54 : 0.96 g (typ.) SOP14-P-300-1.27A : 0.18 g (typ.) SOL14-P-150-1.27 : 0.12 g (typ.) TSSOP14-P-0044-0.65A : 0.06 g (typ.) 1 2007-10-01 TC74HCU04AP/AF/AFN/AFT IEC Logic Symbol Truth Table A Y L H H L Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7 V CC DC input voltage V 0.5 to V + 0.5 V IN CC DC output voltage V 0.5 to V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I 25 mA OUT DC V /ground current I 50 mA CC CC Power dissipation P 500 (DIP) (Note 2)/180 (SOP/TSSOP) mW D Storage temperature T 65 to 150 C stg Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: 500 mW in the range of Ta = 40 to 65C. From Ta = 65 to 85C a derating factor of 10 mW/C shall be applied until 300 mW. Operating Ranges (Note) Characteristics Symbol Rating Unit Supply voltage V 2 to 6 V CC Input voltage V 0 to V V IN CC Output voltage V 0 to V V OUT CC Operating temperature T 40 to 85 C opr Note: The operating ranges must be maintained to ensure the normal operation of the device. Unused inputs must be tied to either VCC or GND. 2 2007-10-01