TC74LCX07F/FT/FK TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LCX07F, TC74LCX07FT, TC74LCX07FK Low-Voltage HEX Buffer with 5-V Tolerant Inputs and Outputs (open drain) The TC74LCX07 is a high-performance CMOS buffer. Designed TC74LCX07F for use in 3.3-V systems, it achieves high-speed operation while maintaining the CMOS low power dissipation. The TC74LCX07 has high performance MOS N-channel transistor. (open-drain outputs) The device is designed for low-voltage (3.3 V) V applications, CC but it could be used to interface to 5-V supply* environment for inputs. All inputs are equipped with protection circuits against static discharge. TC74LCX07FT *I absolute maximum rating must be observed. OUT Features Low-voltage operation: V = 1.65 to 5.5 V CC High-speed operation: t = 3.7 ns (max) (V = 3.0 to 3.6 V) pz CC Output current: I = 24 mA (min) (V = 3.0 V) OL CC Latch-up performance: > 500 mA Available in JEITA SOP, TSSOP and VSSOP (US) TC74LCX07FK Open-drain outputs Power-down protection provided on all inputs and outputs Pin and function compatible with the 74 series (74AC/VHC/HC/F/ALS/LS etc.) 07 type Weight SOP14-P-300-1.27A : 0.18 g (typ.) TSSOP14-P-0044-0.65A : 0.06 g (typ.) VSSOP14-P-0030-0.50 : 0.02 g (typ.) Note: The Electrical Characteristics of V =1.80.15V and that of V =5.00.5V are only applicable for CC CC products which manufactured from January 2009 onward. Start of commercial production 1999-10 1 2014-03-01 TC74LCX07F/FT/FK Pin Assignment (top view) IEC Logic Symbol 1 2 1A 1 1Y 1A 1 14 V CC 3 4 2A 2Y 5 6 1Y 2 13 6A 3A 3Y 9 8 4A 4Y 2A 3 12 6Y 11 10 5A 5Y 13 12 6A 6Y 2Y 4 11 5A 3A 5 10 5Y 3Y 6 9 4A GND 7 8 4Y Truth Table Systm Diagram (per gate) Inputs Outputs Y A A Y L L H Z Z: High impedance Absolute Maximum Ratings (Note 1) Characteristics Symbol Rating Unit Power supply voltage V 0.5 to 7.0 V CC DC input voltage V 0.5 to 7.0 V IN DC output voltage V 0.5 to 7.0 (Note 2) V OUT Input diode current I 50 mA IK Output diode current I 50 (Note 3) mA OK DC output current I 50 mA OUT Power dissipation P 180 mW D DC V /ground current I /I 100 mA CC CC GND Storage temperature T 65 to 150 C stg Note 1: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 2: Output in OFF state. I absolute maximum rating must be observed (Output in low state) OUT Note 3: V < GND OUT 2 2014-03-01