TMBT3906 TOSHIBA Transistor Silicon PNP Epitaxial Type TMBT3906 Audio Frequency General Purpose Amplifier Applications High voltage and high current : V = 50 V, I = 200 mA (max) CEO C Complementary to TMBT3904 Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage V 50 V CBO Collector-emitter voltage V 50 V CEO Emitter-base voltage V 5 V EBO Collector current I 200 mA C Base current I 30 mA B 1. Base P 1) 320 mW C (Note 2. Emitter Collector power dissipation 3. Collector P ) 1000 mW C (Note 2 Junction temperature T 150 C j Storage temperature range T 55 to 150 C stg SOT23 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on an FR4 board. 2 (25.4mm x 25.4mm x 1.6mm, Cu Pad: 0.42mm x 3) Note 2: Mounted on an FR4 board. 2 (25.4mm x 25.4mm x 1.6mm, Cu Pad: 645mm ) Marking S W Start of commercial production 2015-01 2015-2018 2018-05-17 1 Toshiba Electronic Devices & Storage Corporation TMBT3906 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current I V = 50 V, I = 0 mA 0.1 A CBO CB E Emitter cut-off current I V = 5 V, I = 0 mA 0.1 A EBO EB C V = 1 V, I = 0.1 mA 60 CE C V = 1 V, I = 1 mA 80 CE C DC current gain h V = 1 V, I = 10 mA 100 300 FE CE C V = 1 V, I = 50 mA 60 CE C V = 1 V, I = 100 mA 30 CE C = 10 mA, I = 1 mA 0.25 IC B Collector-emitter saturation voltage V V CE (sat) I = 50 mA, I = 5 mA 0.40 C B 0.85 I = 10 mA, I = 1 mA C B Base-emitter saturation voltage V V BE (sat) 0.95 I = 50 mA, I = 5 mA C B Transition frequency f V = 20 V, I = 10 mA 250 MHz T CE C Collector output capacitance C V = 10 V, I = 0 mA, f = 1 MHz 4 7 pF ob CB E V = 5 V, I = 0.1 mA, CE C Noise figure NF 4 dB f = 1 kHz, Rg = 1 k , delay time td OUTPUT 35 INPUT 2.5 k rise time tr 35 0 Switching times ns V -5 V CC storage time ts 200 = -3 V 500 s V BB = 1.9 V fall time tf 50 I = -10mA, I = -I = -1mA C B1 B2 2015-2018 2018-05-17 2 Toshiba Electronic Devices & Storage Corporation 56 3.9 k 270