TC74LVX125FT(SPL) Toshiba

TC74LVX125F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LVX125F, TC74LVX125FT Quad Bus Buffer The TC74LVX125F/ FT is a high-speed CMOS quad bus buffer TC74LVX125F fabricated with silicon gate CMOS technology. Designed for use in 3-V systems, it achieves high-speed operation while maintaining the CMOS low power dissipation. This device is suitable for low-voltage and battery operated systems. This device requires the 3-state control input G to be set high to place the output into the high-impedance. An input protection circuit ensures that 0 to 5.5V can be applied to the input pins without regard to the supply voltage. This device can be used to interface 5V to 3V systems and two supply systems such as battery back up. This circuit prevents TC74LVX125FT device destruction due to mismatched supply and input voltages. Features High-speed: t = 4.4 ns (typ.) (V = 3.3 V) pd CC Low power dissipation: I = 4 A (max) (Ta = 25C) CC Input voltage level: V = 0.8 V (max) (V = 3 V) IL CC V = 2.0 V (min) (V = 3 V) IH CC Power-down protection is provided on all inputs Weight Balanced propagation delays: t t pLH pHL SOP14-P-300-1.27A : 0.18 g (typ.) Low noise: V = 0.5 V (max) OLP TSSOP14-P-0044-0.65A : 0.06 g (typ.) Pin and function compatible with 74HC125 Start of commercial production 1993-01 1 2014-03-01 TC74LVX125F/FT Pin Assignment (top view) IEC Logic Symbol (1) 1G EN (3) 1G 1 14 V CC (2) 1Y 1A (4) 1A 2 13 4G 2G (6) (5) 2Y 2A (10) 1Y 12 4A 3 3G (8) (9) 3Y 3A 2G 4 11 4Y (13) 4G (11) (12) 4Y 2A 5 10 3G 4A 2Y 6 9 3A GND 7 8 3Y Truth Table Inputs Outputs G A Y H X Z L L L L H H X: Dont care Z: High impedance Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7.0 V CC DC input voltage V 0.5 to 7.0 V IN DC output voltage V 0.5 to V + 0.5 V OUT CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I 25 mA OUT DC V /ground current I 50 mA CC CC Power dissipation P 180 mW D Storage temperature T 65 to 150 C stg Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2014-03-01