TC74LVX245FT(SPL) Toshiba

TC74LVX245F/FT TOSHIBA CMOS Digital Integrated Circuit Silicon Monolithic TC74LVX245F, TC74LVX245FT Octal Bus Transceiver TC74LVX245F The TC74LVX245F/ FT is a high-speed CMOS octal bus transceiver fabricated using silicon gate CMOS technology. Designed for use in 3-V systems, it achieves high-speed operation while maintaining the CMOS low power dissipation. These devices are suitable for low-voltage and battery operated systems. It is intended for two-way asynchronous communication between data busses. The direction of data transmission is determined by the level of the DIR input. The enable input ( G ) can be used to disable the TC74LVX245FT device so that the busses are effectively isolated. All inputs are equipped with protection circuits against static discharge. Features (Note) High-speed: t = 4.7 ns (typ.) (V = 3.3 V) pd CC Low power dissipation: I = 4 A (max) (Ta = 25C) CC Input voltage level: V = 0.8 V (max) (V = 3 V) IL CC Weight V = 2.0 V (min) (V = 3 V) IH CC SOP20-P-300-1.27A : 0.22 g (typ.) Balanced propagation delays: t t pLH pHL TSSOP20-P-0044-0.65A : 0.08 g (typ.) Low noise: V = 0.8 V (max) OLP Pin and function compatible with 74HC245 Note: Do not apply a signal to any bus pins when it is in the output mode. Damage may result. All floating (high impedance) bus pins must have their input levels fixed by means of pull-up or pull-down resistors. A parasitic diode is formed between the bus and V terminals. Therefore bus terminal can not be used to CC interface 5-V to 3-V systems directly. Start of commercial production 1993-01 1 2014-03-01 TC74LVX245F/FT Pin Assignment (top view) IEC Logic Symbol (19) G G3 (1) DIR 1 20 V CC DIR 3 EN 1 (BA) 3 EN 2 (AB) A1 2 19 G (2) (18) A2 18 B1 3 A1 1 B1 2 A3 4 17 B2 (3) (17) A2 B2 A4 5 16 B3 (4) (16) A3 B3 A5 6 15 B4 (5) (15) A6 7 14 B5 A4 B4 A7 8 13 B6 (6) (14) A5 B5 A8 9 12 B7 (7) (13) A6 B6 GND 10 11 B8 (8) (12) A7 B7 (9) (11) A8 B8 Truth Table Inputs Function Outputs G DIR A-Bus B-Bus L L A = B Output Input L H B = A Input Output H X Z High impedance X: Dont care Z: High impedance Absolute Maximum Ratings (Note) Characteristics Symbol Rating Unit Supply voltage range V 0.5 to 7.0 V CC DC input voltage V 0.5 to 7.0 V IN (DIR,G) DC bus I/O voltage V 0.5 to V + 0.5 V I/O CC Input diode current I 20 mA IK Output diode current I 20 mA OK DC output current I 25 mA OUT DC V /ground current I 75 mA CC CC Power dissipation P 180 mW D Storage temperature T 65 to 150 C stg Note: Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or even destruction. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings and the operating ranges. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (Handling Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 2 2014-03-01